STMicroelectronics SCT060HU Type N-Channel MOSFET, 30 A, 750 V Enhancement, 7-Pin HU3PAK SCT060HU75G3AG
- RS Stock No.:
- 152-109
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
This image is representative of the product range
Subtotal (1 reel of 600 units)*
PHP548,094.00
(exc. VAT)
PHP613,866.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,000 unit(s) ready to ship from another location
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Units | Per Unit | Per Reel* |
|---|---|---|
| 600 + | PHP913.49 | PHP548,094.00 |
*price indicative
- RS Stock No.:
- 152-109
- Mfr. Part No.:
- SCT060HU75G3AG
- Manufacturer:
- STMicroelectronics
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | STMicroelectronics | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 30A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | SCT060HU | |
| Package Type | HU3PAK | |
| Mount Type | Surface | |
| Pin Count | 7 | |
| Maximum Drain Source Resistance Rds | 58mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 29nC | |
| Forward Voltage Vf | 3V | |
| Maximum Gate Source Voltage Vgs | ±18 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Width | 19 mm | |
| Length | 14.1mm | |
| Height | 3.6mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand STMicroelectronics | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 30A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series SCT060HU | ||
Package Type HU3PAK | ||
Mount Type Surface | ||
Pin Count 7 | ||
Maximum Drain Source Resistance Rds 58mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 29nC | ||
Forward Voltage Vf 3V | ||
Maximum Gate Source Voltage Vgs ±18 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Width 19 mm | ||
Length 14.1mm | ||
Height 3.6mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using ST’s Advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
AEC-Q101 qualified
High speed switching performances
Very fast and robust intrinsic body diode
Source sensing pin for increased efficiency
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