Infineon IQE Type N-Channel MOSFET, 253 A, 30 V, 8-Pin PQFN IQE050N08NM5CGATMA1
- RS Stock No.:
- 240-6638
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 2 units)*
PHP274.03
(exc. VAT)
PHP306.914
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 350 left, ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP137.015 | PHP274.03 |
| 10 - 98 | PHP132.90 | PHP265.80 |
| 100 - 248 | PHP124.93 | PHP249.86 |
| 250 - 498 | PHP113.685 | PHP227.37 |
| 500 + | PHP100.045 | PHP200.09 |
*price indicative
- RS Stock No.:
- 240-6638
- Mfr. Part No.:
- IQE050N08NM5CGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 253A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Package Type | PQFN | |
| Series | IQE | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 0.85mΩ | |
| Maximum Gate Source Voltage Vgs | 16 V | |
| Maximum Power Dissipation Pd | 81W | |
| Typical Gate Charge Qg @ Vgs | 80nC | |
| Forward Voltage Vf | 0.73V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Length | 3.3mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 253A | ||
Maximum Drain Source Voltage Vds 30V | ||
Package Type PQFN | ||
Series IQE | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 0.85mΩ | ||
Maximum Gate Source Voltage Vgs 16 V | ||
Maximum Power Dissipation Pd 81W | ||
Typical Gate Charge Qg @ Vgs 80nC | ||
Forward Voltage Vf 0.73V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Length 3.3mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon OptiMOSTM 5 80V PQFN 3.3x3.3 Source-Down features 80 V and low RDS(on) of 5.0 mOhm. It offers several advantages, such as increased thermal capability, advanced power density or improved layout possibilities. Furthermore, the higher efficiency, the reduced active cooling requirements and the effective layout for thermal management are benefits at the system level.
Improved PCB losses
Enabling highest power density and performance
Related links
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE006NE2LM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE030N06NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE050N08NM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5ATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE065N10NM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE006NE2LM5CGATMA1
- Infineon IQE Type N-Channel MOSFET 30 V, 8-Pin PQFN IQE008N03LM5CGATMA1