Microchip Electrically Isolated N Channel and P Channel Pairs (2 Pairs) TC7920 1 N channel, P-Channel MOSFET Arrays, 1.8
- RS Stock No.:
- 598-568
- Mfr. Part No.:
- TC7920K6-G
- Manufacturer:
- Microchip
N
Subtotal (1 reel of 3300 units)*
PHP476,731.20
(exc. VAT)
PHP533,940.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- Shipping from February 02, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Reel* |
|---|---|---|
| 3300 + | PHP144.464 | PHP476,731.20 |
*price indicative
- RS Stock No.:
- 598-568
- Mfr. Part No.:
- TC7920K6-G
- Manufacturer:
- Microchip
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Microchip | |
| Product Type | MOSFET Arrays | |
| Channel Type | N channel, P-Channel | |
| Maximum Continuous Drain Current Id | 1.8A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | TC7920 | |
| Package Type | DFN | |
| Mount Type | Surface | |
| Pin Count | 12 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 25 V | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | |
| Height | 1mm | |
| Width | 4.15 mm | |
| Standards/Approvals | RoHS Certificate of Compliance | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Microchip | ||
Product Type MOSFET Arrays | ||
Channel Type N channel, P-Channel | ||
Maximum Continuous Drain Current Id 1.8A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series TC7920 | ||
Package Type DFN | ||
Mount Type Surface | ||
Pin Count 12 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 25 V | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Electrically Isolated N Channel and P Channel Pairs (2 Pairs) | ||
Height 1mm | ||
Width 4.15 mm | ||
Standards/Approvals RoHS Certificate of Compliance | ||
Number of Elements per Chip 1 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Microchip High voltage, low-threshold N-channel and P-channel MOSFETs in a 12-lead DFN package feature integrated output drain high-voltage diodes, gate-to-source resistors, and gate-to-source Zener diode clamps, making them ideal for high-voltage pulser applications. These complementary, high-speed, high-voltage, gate-clamped MOSFET pairs use an advanced vertical DMOS structure and a proven silicon-gate manufacturing process. This combination delivers the power handling capabilities of bipolar transistors, along with the high input impedance and positive temperature coefficient characteristic of MOS devices.
Integrated gate to source resistor
Integrated gate to source Zener diode
Low threshold, low on-resistance
Low input and output capacitance
Fast switching speeds
Related links
- Microchip Two Pairs of N and P Channel TC8220 1 P-Channel 2.3 A
- Microchip Independent N Channel and P Channel Mosfet TC2320 1 P-Channel 2.1 A
- Microchip TC1550 1 P-Channel 350 mA 8-Pin 8-Lead SOIC (TG)
- Microchip Complementary Pair TC6320 1 P-Channel 2 A 8-Pin VDFN
- Microchip Dual N Channel TD9944 1 Dual N-Channel MOSFET Arrays 240 V Enhancement, 8-Pin SOIC TD9944TG-G
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP BSL308CH6327XTSA1
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP
- ROHM HT8KE6 2 Type N-Channel MOSFET Arrays 100 V Enhancement, 8-Pin HSMT-8 HT8KE6HTB1