Infineon Dual OptiMOS 1 Type P, Type N-Channel MOSFET Arrays, 2.3 A, 30 V Enhancement, 6-Pin TSOP BSL308CH6327XTSA1
- RS Stock No.:
- 214-4335
- Distrelec Article No.:
- 304-39-398
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Subtotal (1 pack of 50 units)*
PHP1,625.00
(exc. VAT)
PHP1,820.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
- Plus 11,250 unit(s) shipping from August 10, 2026
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP32.50 | PHP1,625.00 |
| 100 - 100 | PHP29.809 | PHP1,490.45 |
| 150 - 200 | PHP27.497 | PHP1,374.85 |
| 250 - 450 | PHP25.531 | PHP1,276.55 |
| 500 + | PHP24.841 | PHP1,242.05 |
*price indicative
- RS Stock No.:
- 214-4335
- Distrelec Article No.:
- 304-39-398
- Mfr. Part No.:
- BSL308CH6327XTSA1
- Manufacturer:
- Infineon
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET Arrays | |
| Channel Type | Type P, Type N | |
| Maximum Continuous Drain Current Id | 2.3A | |
| Maximum Drain Source Voltage Vds | 30V | |
| Series | OptiMOS | |
| Package Type | TSOP | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 57mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.1V | |
| Typical Gate Charge Qg @ Vgs | -5nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.6W | |
| Maximum Operating Temperature | 150°C | |
| Transistor Configuration | Dual | |
| Standards/Approvals | IEC61249-2-21, RoHS | |
| Length | 2.9mm | |
| Height | 1mm | |
| Number of Elements per Chip | 1 | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET Arrays | ||
Channel Type Type P, Type N | ||
Maximum Continuous Drain Current Id 2.3A | ||
Maximum Drain Source Voltage Vds 30V | ||
Series OptiMOS | ||
Package Type TSOP | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 57mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.1V | ||
Typical Gate Charge Qg @ Vgs -5nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.6W | ||
Maximum Operating Temperature 150°C | ||
Transistor Configuration Dual | ||
Standards/Approvals IEC61249-2-21, RoHS | ||
Length 2.9mm | ||
Height 1mm | ||
Number of Elements per Chip 1 | ||
Automotive Standard AEC-Q101 | ||
Infineon OptiMOS Series MOSFET Arrays, 30V Maximum Drain Source Voltage, 2.3A Maximum Continuous Drain Current - BSL308CH6327XTSA1
Features and Benefits:
• Maximum continuous drain current 2.3A enables moderate load handling
• Maximum Vds 30V supports 30V system architectures
• Maximum gate‑source voltage 20V protects gate integrity under transients
• Forward voltage 1.1V improves efficiency in diode conduction paths
• Rated to 150°C allows reliable operation at elevated junction temperatures
Applications
• Ideal for high‑density DC-DC converter switch stages
• Used with battery management circuits in vehicles and equipment
• Can be used for motor driver low‑side or high‑side switching
• Suitable for compact power distribution on surface‑mount PCBs
What mounting type is required for board assembly?
How does it behave across temperature extremes?
Are there separate transistor elements per chip?
What standards and material compliance are indicated?
Related links
- Infineon Dual OptiMOS 1 Type P 2.3 A 6-Pin TSOP
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- Infineon Dual OptiMOS 2 Type N-Channel MOSFET Arrays 60 V Enhancement, 8-Pin TDSON IPG20N06S4L26AATMA1
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP
- Infineon Isolated OptiMOS 2 Type P 1.5 A 6-Pin TSOP BSL215CH6327XTSA1
- Infineon Isolated OptiMOS™ 2 Type N 1.5 A 6-Pin TSOP-6 BSL316CH6327XTSA1
- Vishay Dual TrenchFET 2 Type N 3.9 A 6-Pin TSOP SI3585CDV-T1-GE3
- Infineon Dual OptiMOS 2 Type N-Channel MOSFET 25 V Enhancement, 8-Pin TISON-8
