Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 40 A, 25 V Enhancement, 8-Pin TISON-8
- RS Stock No.:
- 214-8976
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 reel of 5000 units)*
PHP307,720.00
(exc. VAT)
PHP344,645.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
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- Shipping from May 25, 2026
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Units | Per Unit | Per Reel* |
|---|---|---|
| 5000 - 5000 | PHP61.544 | PHP307,720.00 |
| 10000 - 10000 | PHP59.698 | PHP298,490.00 |
| 15000 + | PHP57.907 | PHP289,535.00 |
*price indicative
- RS Stock No.:
- 214-8976
- Mfr. Part No.:
- BSC0910NDIATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 40A | |
| Maximum Drain Source Voltage Vds | 25V | |
| Series | OptiMOS | |
| Package Type | TISON-8 | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 5.9mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.87V | |
| Typical Gate Charge Qg @ Vgs | 23nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Transistor Configuration | Dual | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.1mm | |
| Length | 5mm | |
| Standards/Approvals | RoHS, IEC61249-2-21, JEDEC1 | |
| Width | 6 mm | |
| Number of Elements per Chip | 2 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 40A | ||
Maximum Drain Source Voltage Vds 25V | ||
Series OptiMOS | ||
Package Type TISON-8 | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 5.9mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.87V | ||
Typical Gate Charge Qg @ Vgs 23nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Transistor Configuration Dual | ||
Maximum Operating Temperature 150°C | ||
Height 1.1mm | ||
Length 5mm | ||
Standards/Approvals RoHS, IEC61249-2-21, JEDEC1 | ||
Width 6 mm | ||
Number of Elements per Chip 2 | ||
Automotive Standard No | ||
The Infineon range of OptiMOS products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications. The Dual N-channel OptiMOS MOSFETs, comes Halogen-free according to IEC61249-2-21 and Pb-free lead plating; RoHS compliant.
Monolithic integrated Schottky-like diode
Optimized for high performance buck converters
100% avalanche tested
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