Infineon Dual OptiMOS 2 Type N-Channel MOSFET, 5 A, 55 V Enhancement, 8-Pin DSO BSO604NS2XUMA1

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Subtotal (1 pack of 10 units)*

PHP1,095.64

(exc. VAT)

PHP1,227.12

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP109.564PHP1,095.64
20 - 90PHP100.435PHP1,004.35
100 - 240PHP92.722PHP927.22
250 - 490PHP86.11PHP861.10
500 +PHP83.748PHP837.48

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Packaging Options:
RS Stock No.:
222-4625
Mfr. Part No.:
BSO604NS2XUMA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

5A

Maximum Drain Source Voltage Vds

55V

Package Type

DSO

Series

OptiMOS

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

35mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

2W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

0.9V

Typical Gate Charge Qg @ Vgs

19.7nC

Maximum Operating Temperature

150°C

Transistor Configuration

Dual

Standards/Approvals

No

Height

1.47mm

Length

4.9mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

The Infineon design of MOSFETs, also known as MOSFET transistors, stands for ’Metal Oxide Semiconductor Field-Effect Transistors’. MOSFETs are transistor devices which are controlled by a capacitor. The "Field-Effect" means that they are controlled by voltage. The aim of a MOSFET is to control the flow of the current passing through from the source to the drain terminals.

Logic level

Enhancement Mode Green Product (RoHS compliant)

AEC Qualified

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