Infineon Isolated OptiMOS 2 Type P, Type N-Channel MOSFET, 1.5 A, 20 V Enhancement, 6-Pin TSOP

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP42,660.00

(exc. VAT)

PHP47,790.00

(inc. VAT)

Add to Basket
Select or type quantity
In Stock
  • Plus 15,000 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units
Per Unit
Per Reel*
3000 +PHP14.22PHP42,660.00

*price indicative

RS Stock No.:
166-1086
Mfr. Part No.:
BSL215CH6327XTSA1
Manufacturer:
Infineon
Find similar products by selecting one or more attributes.
Select all

Brand

Infineon

Product Type

MOSFET

Channel Type

Type P, Type N

Maximum Continuous Drain Current Id

1.5A

Maximum Drain Source Voltage Vds

20V

Package Type

TSOP

Series

OptiMOS

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

280mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3nC

Maximum Power Dissipation Pd

500mW

Forward Voltage Vf

0.8V

Maximum Operating Temperature

150°C

Transistor Configuration

Isolated

Standards/Approvals

No

Length

2.9mm

Height

1mm

Number of Elements per Chip

2

Automotive Standard

AEC-Q101

COO (Country of Origin):
MY

Infineon OptiMOS Series MOSFET, 20V Maximum Drain Source Voltage, 1.5A Maximum Continuous Drain Current - BSL215CH6327XTSA1


This MOSFET is a compact surface-mounted power transistor device designed for switching and amplification in automotive and industrial contexts. It comprises paired transistor elements in an isolated configuration to support complementary applications where both P‑channel and N‑channel operation is required. The component is tailored for use on printed circuit boards where a small footprint and industry-specific reliability are important.

Features and Benefits:


• Low gate charge of 3 nC enables faster switching performance
• Maximum continuous drain current of 1.5A supports moderate-load circuits
• Drain-source resistance of 280 mΩ reduces conduction losses
• Rated for 20V drain-source voltage for low-voltage systems
• Power dissipation of 500 mW manages thermal load in compact designs
• Qualified to AEC‑Q101 for elevated automotive stress tolerance

Applications


• Suitable for automotive signal switching and control circuits
• Used with battery management and power-distribution modules
• Ideal for compact DC‑DC converters and voltage regulators
• Can be used for load switching in infotainment subsystems
• Appropriate for embedded motor-control driver stages

What temperature range can it operate within reliably?


It functions across -55 °C to 150 °C, enabling use from cold starts to high under‑bonnet temperatures.

How many transistor elements are provided on the chip?


The device contains two elements per chip arranged in an isolated configuration for flexible circuit topologies.

What package and pin count should designers plan for?


It is supplied in a TSOP package with six pins for surface mounting and layout planning.

Which gate‑source and forward voltage limits must be observed?


The maximum gate‑source voltage is 12V and the forward voltage is 0.8V for diode conduction considerations.

Related links

Be the first to know about our latest products and offers

Email address

The personal information you provide to us when signing up to this mailing list will be processed in line with the Privacy Policy