Infineon CoolMOS C7 Type N-Channel MOSFET & Diode, 145 A, 700 V Enhancement, 3-Pin TO-247 IPW65R065C7XKSA1
- RS Stock No.:
- 220-7459
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 2 units)*
PHP818.93
(exc. VAT)
PHP917.202
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 212 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 2 - 8 | PHP409.465 | PHP818.93 |
| 10 - 98 | PHP375.535 | PHP751.07 |
| 100 - 248 | PHP346.575 | PHP693.15 |
| 250 - 498 | PHP321.685 | PHP643.37 |
| 500 + | PHP312.63 | PHP625.26 |
*price indicative
- RS Stock No.:
- 220-7459
- Mfr. Part No.:
- IPW65R065C7XKSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET & Diode | |
| Maximum Continuous Drain Current Id | 145A | |
| Maximum Drain Source Voltage Vds | 700V | |
| Series | CoolMOS C7 | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 65mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 0.9V | |
| Maximum Power Dissipation Pd | 171W | |
| Typical Gate Charge Qg @ Vgs | 64nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Width | 5.21 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET & Diode | ||
Maximum Continuous Drain Current Id 145A | ||
Maximum Drain Source Voltage Vds 700V | ||
Series CoolMOS C7 | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 65mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 0.9V | ||
Maximum Power Dissipation Pd 171W | ||
Typical Gate Charge Qg @ Vgs 64nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Height 21.1mm | ||
Length 16.13mm | ||
Width 5.21 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon Cool MOS C7 super junction MOSFET series is a revolutionary step forward in technology, providing the worlds' lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.
650V voltage
Revolutionary best-in-class R DS(on)/package
Reduced energy stored in output capacitance (Eoss)
Lower gate charge Qg
Space saving through use of smaller packages or reduction of parts
Improved safety margin and suitable for both SMPS and solar inverter applications
Lowest conduction losses/package
Low switching losses
Better light load efficiency
Increasing power density
Outstanding Cool MOS™ quality
Related links
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- Infineon CoolMOS C7 Type N-Channel MOSFET & Diode 700 V Enhancement, 3-Pin TO-252 IPD65R190C7ATMA1
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 3-Pin TO-247
- Infineon CoolMOS C7 Type N-Channel MOSFET 700 V Enhancement, 4-Pin TO-247