Infineon BFP720H6327XTSA1 Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 897-7282
- Mfr. Part No.:
- BFP720H6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
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View bulk pricing optionsSubtotal (1 pack of 15 units)*
PHP247.95
(exc. VAT)
PHP277.65
(inc. VAT)
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Last RS stock
- Final 1,230 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 15 - 15 | PHP16.53 | PHP247.95 |
| 30 - 60 | PHP16.034 | PHP240.51 |
| 75 - 135 | PHP15.553 | PHP233.30 |
| 150 - 285 | PHP15.086 | PHP226.29 |
| 300 + | PHP14.633 | PHP219.50 |
*price indicative
- RS Stock No.:
- 897-7282
- Mfr. Part No.:
- BFP720H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 45GHz | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 100mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Series | BFP720 | |
| Length | 2mm | |
| Height | 0.9mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 45GHz | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 100mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Series BFP720 | ||
Length 2mm | ||
Height 0.9mm | ||
Automotive Standard No | ||
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
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