Infineon Transistor, 25 mA NPN, 13 V, 4-Pin SOT-343
- RS Stock No.:
- 165-8077
- Mfr. Part No.:
- BFP720H6327XTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Currently unavailable
We don't know if this item will be back in stock, RS intend to remove it from our range soon.
- RS Stock No.:
- 165-8077
- Mfr. Part No.:
- BFP720H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 25mA | |
| Maximum Collector Emitter Voltage Vceo | 13V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 100mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | No | |
| Width | 2.1 mm | |
| Series | BFP720 | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 25mA | ||
Maximum Collector Emitter Voltage Vceo 13V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 100mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals No | ||
Width 2.1 mm | ||
Series BFP720 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
SiGe RF Bipolar Transistors, Infineon
A range of ultra-low-noise wideband NPN bipolar RF transistors from Infineon. These hetero-junction bipolar devices utilize Infineon’s silicon germanium carbon (SiGe:C) material technology and are especially suited for use mobile applications in which low power consumption is a key requirement. With typical transition frequencies of up to 65 GHz these devices offer high power gain at frequencies of up to 10 GHz when used in amplifier applications. The transistors include internal circuitry for ESD and excessive RF input power protection.
Bipolar Transistors, Infineon
Related links
- Infineon BFP720H6327XTSA1 Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon BFP405FH6327XTSA1 RF Bipolar Transistor 15 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP640ESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343