Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-247

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Subtotal (1 tube of 25 units)*

PHP3,486.50

(exc. VAT)

PHP3,905.00

(inc. VAT)

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Units
Per Unit
Per Tube*
25 - 25PHP139.46PHP3,486.50
50 - 75PHP135.974PHP3,399.35
100 - 225PHP132.575PHP3,314.38
250 - 475PHP129.26PHP3,231.50
500 +PHP126.029PHP3,150.73

*price indicative

RS Stock No.:
913-3972
Mfr. Part No.:
IRFP4227PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

25mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-40°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

5.3 mm

Length

15.9mm

Height

20.3mm

Automotive Standard

No

COO (Country of Origin):
MX

Infineon HEXFET Series MOSFET, 65A Maximum Continuous Drain Current, 330W Maximum Power Dissipation - IRFP4227PBF


This MOSFET functions as a vital component in contemporary electronic applications, offering dependable control and switching for high-power systems. It delivers robust performance and efficiency, making it suitable for a variety of industrial tasks, particularly in settings where high thermal resistance and low conduction losses are essential. The enhancement mode design facilitates optimal operation under diverse conditions, thereby making it ideal for automation, electrical systems, and mechanical applications.

Features & Benefits


• Provides 65A continuous drain current for intensive applications

• Operates efficiently at a maximum drain-source voltage of 200V

• Low RDS(on) contributes to energy efficiency during use

• Rated for high temperature tolerance up to 175°C

• Optimised for fast switching with minimal fall and rise times

• Offers excellent repetitive avalanche capability for enhanced system reliability

Applications


• Utilised in energy recovery systems to enhance efficiency

• Compatible with PDP sustain for effective performance

• Suitable for high-power motor drive circuits requiring accurate control

• Employed in switching power supplies within automation processes

• Used in professional audio amplifiers for effective output handling

What is the maximum current that can be handled at elevated temperatures?


It can manage a continuous drain current of 46A at 100°C, ensuring functionality in tough environments.

How does this component perform under pulsed conditions?


The pulsed drain current can reach up to 130A, making it appropriate for transient applications.

What are the cooling requirements when using this device?


It has a thermal resistance of 0.45°C/W from junction to case, requiring effective heat dissipation mechanisms for optimal operation.

What type of mounting is required for installation?


Installation necessitates through-hole mounting, suitable for robust applications needing solid connections.

How does the gate charge impact switching speed?


It features a typical total gate charge of 70nC, enabling quick and efficient switching, which is crucial in high-speed applications.

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