Infineon HEXFET Type N-Channel MOSFET, 50 A, 200 V Enhancement, 3-Pin TO-247
- RS Stock No.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 25 units)*
PHP2,413.00
(exc. VAT)
PHP2,702.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 750 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | PHP96.52 | PHP2,413.00 |
| 50 - 100 | PHP94.59 | PHP2,364.75 |
| 125 - 225 | PHP92.698 | PHP2,317.45 |
| 250 - 475 | PHP90.844 | PHP2,271.10 |
| 500 + | PHP89.027 | PHP2,225.68 |
*price indicative
- RS Stock No.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 50A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 40mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 300W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 234nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Width | 5.2 mm | |
| Height | 21.1mm | |
| Length | 16.13mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 50A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 40mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 300W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 234nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Width 5.2 mm | ||
Height 21.1mm | ||
Length 16.13mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP260MPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247 IRFP260NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-247