Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260MPBF
- RS Stock No.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Bulk discount available
Subtotal (1 tube of 25 units)*
PHP2,413.00
(exc. VAT)
PHP2,702.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 775 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 25 - 25 | PHP96.52 | PHP2,413.00 |
| 50 - 100 | PHP94.59 | PHP2,364.75 |
| 125 - 225 | PHP92.698 | PHP2,317.45 |
| 250 - 475 | PHP90.844 | PHP2,271.10 |
| 500 + | PHP89.027 | PHP2,225.68 |
*price indicative
- RS Stock No.:
- 124-8763
- Mfr. Part No.:
- IRFP260MPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 50 A | |
| Maximum Drain Source Voltage | 200 V | |
| Package Type | TO-247AC | |
| Series | HEXFET | |
| Mounting Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance | 40 mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Threshold Voltage | 4V | |
| Minimum Gate Threshold Voltage | 2V | |
| Maximum Power Dissipation | 300 W | |
| Transistor Configuration | Single | |
| Maximum Gate Source Voltage | -20 V, +20 V | |
| Maximum Operating Temperature | +175 °C | |
| Typical Gate Charge @ Vgs | 234 nC @ 10 V | |
| Number of Elements per Chip | 1 | |
| Length | 16.13mm | |
| Transistor Material | Si | |
| Width | 5.2mm | |
| Minimum Operating Temperature | -55 °C | |
| Height | 21.1mm | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type N | ||
Maximum Continuous Drain Current 50 A | ||
Maximum Drain Source Voltage 200 V | ||
Package Type TO-247AC | ||
Series HEXFET | ||
Mounting Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance 40 mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Threshold Voltage 4V | ||
Minimum Gate Threshold Voltage 2V | ||
Maximum Power Dissipation 300 W | ||
Transistor Configuration Single | ||
Maximum Gate Source Voltage -20 V, +20 V | ||
Maximum Operating Temperature +175 °C | ||
Typical Gate Charge @ Vgs 234 nC @ 10 V | ||
Number of Elements per Chip 1 | ||
Length 16.13mm | ||
Transistor Material Si | ||
Width 5.2mm | ||
Minimum Operating Temperature -55 °C | ||
Height 21.1mm | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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