Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

RS Stock No.:: 124-9022
Mfr. Part No.:: IRFP4668PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 130 A, 200 V, 3-Pin TO-247AC IRFP4668PBF

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Subtotal (1 tube of 25 units)*

PHP6,484.50

(exc. VAT)

PHP7,262.75

(inc. VAT)

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In Stock

25 unit(s) ready to ship from another location
Plus 1,575 unit(s) shipping from November 19, 2025

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Units	Per Unit	Per Tube*
25 - 25	PHP259.38	PHP6,484.50
50 - 100	PHP251.599	PHP6,289.98
125 - 225	PHP244.051	PHP6,101.28
250 - 475	PHP236.73	PHP5,918.25
500 +	PHP229.628	PHP5,740.70

*price indicative

RS Stock No.:: 124-9022
Mfr. Part No.:: IRFP4668PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	130 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	10 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	5V
	Minimum Gate Threshold Voltage	3V
	Maximum Power Dissipation	520 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-30 V, +30 V
	Typical Gate Charge @ Vgs	161 nC @ 10 V
	Length	15.87mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Width	5.31mm
	Maximum Operating Temperature	+175 °C
	Minimum Operating Temperature	-55 °C
	Forward Diode Voltage	1.3V
	Height	20.7mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 130 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 10 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 5V
	Minimum Gate Threshold Voltage 3V
	Maximum Power Dissipation 520 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -30 V, +30 V
	Typical Gate Charge @ Vgs 161 nC @ 10 V
	Length 15.87mm
	Transistor Material Si
	Number of Elements per Chip 1
	Width 5.31mm
	Maximum Operating Temperature +175 °C
	Minimum Operating Temperature -55 °C
	Forward Diode Voltage 1.3V
	Height 20.7mm

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 130A Maximum Continuous Drain Current, 200V Maximum Drain Source Voltage - IRFP4668PBF

This MOSFET is a high-performance N-channel device designed for efficient power management in various applications. Its dimensions are 15.87mm in length, 5.31mm in width, and 20.7mm in height, housed in a TO-247AC package. With robust specifications including a maximum continuous drain current of 130A and a maximum drain-source voltage of 200V, it is ideal for demanding electrical applications.

Features & Benefits

• Enhanced body diode for improved switching performance
• Low Rds(on) of 10mΩ minimises power loss
• High efficiency in synchronous rectification circuits
• Increased ruggedness under dynamic dV/dt conditions
• Fully characterised avalanche and thermal performance for reliability

Applications

• Used in high-speed power switching
• Suitable for uninterruptible power supply systems
• Ideal for hard-switched and high-frequency circuits
• Applicable in various automation and industrial power systems

What are the thermal ratings for safe operation?

The maximum power dissipation is rated at 520W at 25°C, and the junction temperature should not exceed 175°C to ensure safe operation.

How does the gate threshold voltage impact functionality?

The gate threshold voltage ranges from 3V to 5V, facilitating efficient control during switching operations, which is crucial for reliable performance in power applications.

Can this MOSFET handle high pulsed current loads?

Yes, it is rated for a pulsed drain current of up to 520A, making it suitable for heavy-duty applications requiring high current handling capabilities.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.