Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF

RS Stock No.:: 542-9771
Mfr. Part No.:: IRFP260NPBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 50 A, 200 V, 3-Pin TO-247AC IRFP260NPBF

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RS Stock No.:: 542-9771
Mfr. Part No.:: IRFP260NPBF
Manufacturer:: Infineon

N-Channel Power MOSFET 150V to 600V, Infineon

Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Infineon HEXFET Series MOSFET, 50A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IRFP260NPBF

This MOSFET is intended for high-power applications, delivering efficiency and reliability across various electronic systems. With its enhancement mode design and robust current handling capabilities, it plays a crucial role in optimising circuit performance while effectively managing thermal dissipation.

Features & Benefits

• Supports continuous drain currents up to 50A for strong performance
• Operates efficiently with a maximum drain-source voltage of 200V
• Enhancement mode design offers improved control and versatility
• Low Rds(on) of 40mΩ reduces energy losses
• Designed for through-hole mounting, facilitating easy installation

Applications

• Utilised in power supply circuits for managing high currents
• Suitable for automotive requiring durable electronic components
• Applied in industrial equipment for effective power control
• Commonly found in renewable energy systems to enhance efficiency

What is the maximum power dissipation for this component?

The power dissipation can reach up to 300W, ensuring efficient performance in high-load conditions.

How does the low Rds(on) benefit circuit efficiency?

The low Rds(on) of 40mΩ significantly reduces conduction losses, enhancing overall efficiency and minimising heat generation during operation.

What are the advantages of using this MOSFET in power applications?

This MOSFET provides high continuous drain current and operates effectively across a wide temperature range, making it suitable for power applications.

Is it easy to install with other components in a circuit?

The through-hole mounting type simplifies integration into various circuit designs, allowing for straightforward assembly with existing components.

For these non-cancellable (NC), and non-returnable (NR) products, Terms and Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	N
	Maximum Continuous Drain Current	50 A
	Maximum Drain Source Voltage	200 V
	Package Type	TO-247AC
	Series	HEXFET
	Mounting Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance	40 mΩ
	Channel Mode	Enhancement
	Maximum Gate Threshold Voltage	4V
	Minimum Gate Threshold Voltage	2V
	Maximum Power Dissipation	300 W
	Transistor Configuration	Single
	Maximum Gate Source Voltage	-20 V, +20 V
	Length	15.9mm
	Typical Gate Charge @ Vgs	234 nC @ 10 V
	Width	5.3mm
	Transistor Material	Si
	Number of Elements per Chip	1
	Maximum Operating Temperature	+175 °C
	Forward Diode Voltage	1.3V
	Minimum Operating Temperature	-55 °C
	Height	20.3mm

	Select all
	Brand Infineon
	Channel Type N
	Maximum Continuous Drain Current 50 A
	Maximum Drain Source Voltage 200 V
	Package Type TO-247AC
	Series HEXFET
	Mounting Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance 40 mΩ
	Channel Mode Enhancement
	Maximum Gate Threshold Voltage 4V
	Minimum Gate Threshold Voltage 2V
	Maximum Power Dissipation 300 W
	Transistor Configuration Single
	Maximum Gate Source Voltage -20 V, +20 V
	Length 15.9mm
	Typical Gate Charge @ Vgs 234 nC @ 10 V
	Width 5.3mm
	Transistor Material Si
	Number of Elements per Chip 1
	Maximum Operating Temperature +175 °C
	Forward Diode Voltage 1.3V
	Minimum Operating Temperature -55 °C
	Height 20.3mm