Infineon HEXFET Type N-Channel MOSFET, 94 A, 200 V Enhancement, 3-Pin TO-247 IRFP90N20DPBF
- RS Stock No.:
- 639-1857
- Mfr. Part No.:
- IRFP90N20DPBF
- Manufacturer:
- Infineon
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View bulk pricing optionsSubtotal (1 unit)*
PHP432.78
(exc. VAT)
PHP484.71
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Being discontinued
- Final 9 unit(s), ready to ship from another location
Units | Per Unit |
|---|---|
| 1 - 9 | PHP432.78 |
| 10 - 49 | PHP419.81 |
| 50 - 99 | PHP407.21 |
| 100 - 249 | PHP395.01 |
| 250 + | PHP383.13 |
*price indicative
- RS Stock No.:
- 639-1857
- Mfr. Part No.:
- IRFP90N20DPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 94A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 580W | |
| Typical Gate Charge Qg @ Vgs | 180nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 30V | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Height | 20.3mm | |
| Standards/Approvals | No | |
| Width | 5.3mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 94A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 580W | ||
Typical Gate Charge Qg @ Vgs 180nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 30V | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Height 20.3mm | ||
Standards/Approvals No | ||
Width 5.3mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 150V to 600V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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