Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP4,375.80

(exc. VAT)

PHP4,900.90

(inc. VAT)

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  • 950 unit(s) shipping from January 15, 2026
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Units
Per Unit
Per Tube*
50 - 50PHP87.516PHP4,375.80
100 - 150PHP84.891PHP4,244.55
200 - 450PHP82.344PHP4,117.20
500 - 950PHP79.873PHP3,993.65
1000 +PHP77.477PHP3,873.85

*price indicative

RS Stock No.:
913-3932
Mfr. Part No.:
IRFB4227PBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Package Type

TO-220

Series

HEXFET

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Forward Voltage Vf

1.3V

Typical Gate Charge Qg @ Vgs

70nC

Minimum Operating Temperature

-40°C

Maximum Power Dissipation Pd

330W

Maximum Gate Source Voltage Vgs

30 V

Maximum Operating Temperature

175°C

Length

10.66mm

Width

4.82 mm

Standards/Approvals

No

Height

9.02mm

Automotive Standard

No

COO (Country of Origin):
CN

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