Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP4,375.80
(exc. VAT)
PHP4,900.90
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 950 unit(s) shipping from January 15, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP87.516 | PHP4,375.80 |
| 100 - 150 | PHP84.891 | PHP4,244.55 |
| 200 - 450 | PHP82.344 | PHP4,117.20 |
| 500 - 950 | PHP79.873 | PHP3,993.65 |
| 1000 + | PHP77.477 | PHP3,873.85 |
*price indicative
- RS Stock No.:
- 913-3932
- Mfr. Part No.:
- IRFB4227PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 65A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 24mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 330W | |
| Maximum Gate Source Voltage Vgs | 30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 10.66mm | |
| Width | 4.82 mm | |
| Standards/Approvals | No | |
| Height | 9.02mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 65A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 24mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 330W | ||
Maximum Gate Source Voltage Vgs 30 V | ||
Maximum Operating Temperature 175°C | ||
Length 10.66mm | ||
Width 4.82 mm | ||
Standards/Approvals No | ||
Height 9.02mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
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Related links
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