Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 200 V Enhancement, 3-Pin TO-220

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Bulk discount available

Subtotal (1 tube of 50 units)*

PHP1,586.50

(exc. VAT)

PHP1,777.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

In Stock

250 unit(s) ready to ship from another location
Plus 550 unit(s) shipping from January 01, 2026

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Units	Per Unit	Per Tube*
50 - 50	PHP31.73	PHP1,586.50
100 - 150	PHP30.778	PHP1,538.90
200 - 450	PHP29.855	PHP1,492.75
500 - 950	PHP28.96	PHP1,448.00
1000 +	PHP28.091	PHP1,404.55

*price indicative

RS Stock No.:: 919-5025
Mfr. Part No.:: IRF630NPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	9.3A
	Maximum Drain Source Voltage Vds	200V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	35nC
	Forward Voltage Vf	1.3V
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	82W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Length	10.54mm
	Width	4.69 mm
	Height	8.77mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 9.3A
	Maximum Drain Source Voltage Vds 200V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 35nC
	Forward Voltage Vf 1.3V
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 82W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Length 10.54mm
	Width 4.69 mm
	Height 8.77mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 9.3A Maximum Continuous Drain Current, 82W Maximum Power Dissipation - IRF630NPBF

This N-channel MOSFET is designed for a range of applications in the automation and electronics sectors. It offers optimal power dissipation capabilities and efficient performance, crucial for high-performance systems. With a maximum drain-source voltage of 200V and a continuous drain current of 9.3A, it ensures dependable operation in challenging electronic environments.

Features & Benefits

• High power rating supports extensive electrical applications

• Efficient design lowers thermal resistance for effective cooling

• Fast switching speeds improve performance in dynamic systems

• Simple drive requirements aid in circuit integration

• Fully avalanche rated, making it suitable for rugged conditions

Applications

• Utilised in industrial power supplies to maintain stable voltage regulation

• Employed in motor control systems for efficient functionality

• Ideal for DC-DC converters and power management circuits

• Used in HVAC systems to control compressor motors

• Appropriate for renewable energy systems, enhancing power efficiency

What is the maximum gate-source voltage that can be applied?

The maximum gate-source voltage is ±20V, ensuring compatibility with various circuit designs.

How does the device handle thermal dissipation during operation?

It has a power dissipation capacity of 82W, allowing for efficient heat management while in use.

Is there a specific mounting type recommended for optimal performance?

The MOSFET is intended for through-hole mounting, which promotes reliable thermal management and electrical connectivity.