Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 80 V Enhancement, 8-Pin SOIC IRF7493TRPBF
- RS Stock No.:
- 915-4960
- Mfr. Part No.:
- IRF7493TRPBF
- Manufacturer:
- Infineon
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PHP845.00
(exc. VAT)
PHP946.40
(inc. VAT)
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In Stock
- Plus 3,350 unit(s) shipping from August 31, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP84.50 | PHP845.00 |
| 50 - 240 | PHP76.767 | PHP767.67 |
| 250 - 490 | PHP70.827 | PHP708.27 |
| 500 - 1240 | PHP68.385 | PHP683.85 |
| 1250 + | PHP66.428 | PHP664.28 |
*price indicative
- RS Stock No.:
- 915-4960
- Mfr. Part No.:
- IRF7493TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Package Type | SOIC | |
| Series | HEXFET | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4mm | |
| Length | 5mm | |
| Height | 1.5mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Package Type SOIC | ||
Series HEXFET | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 4mm | ||
Length 5mm | ||
Height 1.5mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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