Infineon HEXFET Type N-Channel MOSFET, 9.3 A, 80 V Enhancement, 8-Pin SOIC IRF7493TRPBF
- RS Stock No.:
- 915-4960
- Mfr. Part No.:
- IRF7493TRPBF
- Manufacturer:
- Infineon
This image is representative of the product range
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Subtotal (1 pack of 10 units)*
PHP534.60
(exc. VAT)
PHP598.80
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 3,370 unit(s) ready to ship from another location
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP53.46 | PHP534.60 |
| 50 - 240 | PHP48.568 | PHP485.68 |
| 250 - 490 | PHP44.81 | PHP448.10 |
| 500 - 1240 | PHP43.265 | PHP432.65 |
| 1250 + | PHP42.027 | PHP420.27 |
*price indicative
- RS Stock No.:
- 915-4960
- Mfr. Part No.:
- IRF7493TRPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 9.3A | |
| Maximum Drain Source Voltage Vds | 80V | |
| Series | HEXFET | |
| Package Type | SOIC | |
| Mount Type | Surface | |
| Pin Count | 8 | |
| Maximum Drain Source Resistance Rds | 15mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 35nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 2.5W | |
| Maximum Operating Temperature | 150°C | |
| Width | 4 mm | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.5mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 9.3A | ||
Maximum Drain Source Voltage Vds 80V | ||
Series HEXFET | ||
Package Type SOIC | ||
Mount Type Surface | ||
Pin Count 8 | ||
Maximum Drain Source Resistance Rds 15mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 35nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 2.5W | ||
Maximum Operating Temperature 150°C | ||
Width 4 mm | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.5mm | ||
Automotive Standard No | ||
N-Channel Power MOSFET 60V to 80V, Infineon
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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