Infineon HEXFET Type N-Channel MOSFET, 18 A, 40 V Enhancement, 8-Pin SOIC

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 40 V Enhancement, 8-Pin SOIC

This image is representative of the product range

Subtotal (1 reel of 4000 units)*

PHP163,628.00

(exc. VAT)

PHP183,264.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Temporarily out of stock

Shipping from March 27, 2026

Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units	Per Unit	Per Reel*
4000 +	PHP40.907	PHP163,628.00

*price indicative

RS Stock No.:: 165-5716
Mfr. Part No.:: IRF7842TRPBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	40V
	Package Type	SOIC
	Series	HEXFET
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	5.9mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	33nC
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	2.5W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Maximum Operating Temperature	150°C
	Height	1.5mm
	Standards/Approvals	No
	Width	4 mm
	Length	5mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 40V
	Package Type SOIC
	Series HEXFET
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 5.9mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 33nC
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 2.5W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Maximum Operating Temperature 150°C
	Height 1.5mm
	Standards/Approvals No
	Width 4 mm
	Length 5mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 2.5W Maximum Power Dissipation - IRF7842TRPBF

This MOSFET delivers high performance in various electronic applications. With specifications including an 18A continuous drain current and a maximum drain-source voltage of 40V, it enhances power efficiency for electronic devices. Designed for surface mount technology, this device ensures durability and is suitable for professionals in electronics and automation.

Features & Benefits

• Low Rds(on) at 4.5V improves efficiency

• High current handling optimises power delivery

• Minimal gate charge reduces switching losses

• Avalanche rated to enhance reliability

• N-channel configuration supports effective performance in control applications

Applications

• Used in synchronous MOSFET circuits for notebook processor power

• Acts as secondary synchronous rectification in isolated DC-DC converters

• Functions in non-isolated DC-DC converter designs

What is the maximum operating temperature for this device?

It operates efficiently up to +150°C, ensuring reliability in high-temperature environments.

How does this component handle current during operation?

The device supports a continuous drain current of 18A, suitable for various applications.

Can it be used in high-voltage circuits?

Yes, the maximum drain-source voltage is rated at 40V, providing flexibility for high-voltage applications.

What are the thermal resistance characteristics?

The thermal resistance from junction-to-ambient is typically around 50-55°C/W, facilitating effective heat dissipation.

Is this MOSFET compatible with surface mount technology?

Yes, it is available in a SOIC package specifically designed for surface mounting, enhancing ease of integration in circuit designs.