Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

RS Stock No.:: 145-8608
Mfr. Part No.:: IRFB4020PBF
Manufacturer:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220

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Subtotal (1 tube of 50 units)*

PHP3,195.00

(exc. VAT)

PHP3,578.50

(inc. VAT)

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In Stock

Plus 400 unit(s) shipping from August 31, 2026

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Units	Per Unit	Per Tube*
50 +	PHP63.90	PHP3,195.00

*price indicative

RS Stock No.:: 145-8608
Mfr. Part No.:: IRFB4020PBF
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	18A
	Maximum Drain Source Voltage Vds	200V
	Package Type	TO-220
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	100mΩ
	Channel Mode	Enhancement
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	18nC
	Maximum Power Dissipation Pd	100W
	Maximum Operating Temperature	175°C
	Length	10.66mm
	Standards/Approvals	No
	Height	9.02mm
	Width	4.82mm
	Automotive Standard	No

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 18A
	Maximum Drain Source Voltage Vds 200V
	Package Type TO-220
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 100mΩ
	Channel Mode Enhancement
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 18nC
	Maximum Power Dissipation Pd 100W
	Maximum Operating Temperature 175°C
	Length 10.66mm
	Standards/Approvals No
	Height 9.02mm
	Width 4.82mm
	Automotive Standard No

Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - IRFB4020PBF

This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where robust thermal endurance is required. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical solution for discrete power stages and board-mounted switching circuits across a wide temperature range.

Features and Benefits:

• 200V drain rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery

Applications

• Suitable for motor-drive half-bridge stages
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments

What gate-voltage limits should designers observe for safe operation?

The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and to maintain reliable switching behaviour.

How does the device perform across temperature extremes?

It is rated to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation while maintaining specified electrical characteristics.

What package considerations affect PCB layout and cooling?

The TO-220 through-hole form factor provides a single insulated mounting tab and allows direct attachment to a heatsink or chassis for improved thermal management.

How does the body diode influence switching-topology choice?

The intrinsic diode with a 1.3V forward drop should be accounted for in designs with reverse-recovery events to manage dissipation and determine snubber requirements.