N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRFS4020TRLPBF

RS Stock No.:: 168-6013
Mfr. Part No.:: IRFS4020TRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRFS4020TRLPBF

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Subtotal (1 reel of 800 units)**

PHP39,596.80

(exc. VAT)

PHP44,348.80

(inc. VAT)

Temporarily out of stock - back order for despatch 20/05/2025, delivery within 10 working days from desptach date*

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Units	Per Unit	Per Reel**
800 +	PHP49.496	PHP39,596.80

**price indicative

RS Stock No.:: 168-6013
Mfr. Part No.:: IRFS4020TRLPBF
Manufacturer:: Infineon

Digital Audio MOSFET, Infineon

Class D amplifiers are fast becoming the preferred solution for professional and home audio and video systems. Infineon offers a comprehensive range that simplify high-efficiency Class D amplifier design.

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 100W Maximum Power Dissipation - IRFS4020TRLPBF

This MOSFET is designed for optimised performance in Class-D audio amplifier applications. Advanced processing techniques yield low on-resistance while enhancing efficiency, total harmonic distortion (THD), and electromagnetic interference (EMI). It can function effectively at elevated temperatures, making it suitable for various environments.

Features & Benefits

• Designed for high-efficiency Class-D audio amplification
• Low Rds(on) improves overall efficiency
• Operating junction temperature up to 175°C ensures robustness
• Repetitive avalanche capability safeguards against voltage spikes

Applications

• Utilised in Class-D audio amplifiers for improved sound quality
• Ideal for high current power supply
• Suitable for consumer and professional audio equipment
• Employed in high-performance automotive audio systems

What is the maximum continuous drain current?

The device can handle a maximum continuous drain current of 18A at 25°C.

Can this device operate at high temperatures?

Yes, it is designed to function effectively at temperatures as high as 175°C.

What configurations can it be used in?

It is suitable for half-bridge configurations in audio amplifiers, delivering significant power outputs.

How does low gate charge impact performance?

The low gate charge enhances efficiency and reduces the turn-on time, thus improving overall amplifier performance.

Is it compatible with surface mount technology?

Yes, this device is packaged in a D2PAK form factor, which is ideal for surface mount applications.

For products that are Customized and under Non-cancellable & Non-returnable, Sales & Conditions apply.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	105 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4.9V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	100 W
Maximum Gate Source Voltage	-20 V, +20 V
Length	10.67mm
Typical Gate Charge @ Vgs	18 nC @ 10 V
Width	4.83mm
Maximum Operating Temperature	+175 °C
Number of Elements per Chip	1
Height	9.65mm
Forward Diode Voltage	1.3V
Minimum Operating Temperature	-55 °C