Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220
- RS Stock No.:
- 919-4817
- Mfr. Part No.:
- IRF640NPBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 tube of 50 units)*
PHP2,875.70
(exc. VAT)
PHP3,220.80
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 50 unit(s) shipping from August 31, 2026
- Plus 700 unit(s) shipping from September 07, 2026
- Plus 2,000 unit(s) shipping from November 26, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP57.514 | PHP2,875.70 |
| 100 - 150 | PHP55.788 | PHP2,789.40 |
| 200 - 450 | PHP54.115 | PHP2,705.75 |
| 500 - 950 | PHP52.491 | PHP2,624.55 |
| 1000 + | PHP50.917 | PHP2,545.85 |
*price indicative
- RS Stock No.:
- 919-4817
- Mfr. Part No.:
- IRF640NPBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Series | HEXFET | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 150mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Forward Voltage Vf | 1.3V | |
| Maximum Power Dissipation Pd | 150W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 67nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 8.77mm | |
| Standards/Approvals | No | |
| Width | 4.69mm | |
| Length | 10.67mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Series HEXFET | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 150mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20V | ||
Forward Voltage Vf 1.3V | ||
Maximum Power Dissipation Pd 150W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 67nC | ||
Maximum Operating Temperature 175°C | ||
Height 8.77mm | ||
Standards/Approvals No | ||
Width 4.69mm | ||
Length 10.67mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF
This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.
Features & Benefits
• Continuous drain current up to 18A for robust power handling
• Operates effectively at voltage levels up to 200V for increased versatility
• Low on-resistance minimises energy loss during operation
• Simplified drive requirements facilitate integration into circuits
• Fully avalanche rated for enhanced safety and performance
Applications
• Utilised in power supply circuits for industrial automation
• Suitable for motor control in robotics
• Ideal for renewable energy systems such as solar inverters
• Employed in power switching systems for electrical equipment
• Utilised in amplification stages for audio equipment
How does temperature affect the performance?
The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.
What is the significance of the maximum gate-source voltage?
The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.
Can this component handle sudden voltage spikes?
Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.
What is the impact of on-resistance on overall efficiency?
Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.
Is it suitable for surface mount applications?
The TO-220AB package is specifically designed for through-hole mounting, ensuring effective heat dissipation rather than surface mounting.
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