N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

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PHP1,950.20

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PHP2,184.20

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Units	Per Unit	Per Tube**
50 - 50	PHP39.004	PHP1,950.20
100 - 150	PHP37.834	PHP1,891.70
200 - 450	PHP36.699	PHP1,834.95
500 - 950	PHP35.598	PHP1,779.90
1000 +	PHP34.53	PHP1,726.50

**price indicative

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Infineon HEXFET Series MOSFET, 18A Maximum Continuous Drain Current, 150W Maximum Power Dissipation - IRF640NPBF

This MOSFET is intended for high-efficiency switching applications, providing a reliable solution for various electronic systems. Its N-channel configuration ensures minimal on-resistance and high reliability, making it suitable for power management in industrial and commercial environments. This component is designed specifically for users in the automation and electrical sectors, ensuring optimal performance in their applications.

Features & Benefits

• Continuous drain current up to 18A for robust power handling
• Operates effectively at voltage levels up to 200V for increased versatility
• Low on-resistance minimises energy loss during operation
• Simplified drive requirements facilitate integration into circuits
• Fully avalanche rated for enhanced safety and performance

Applications

• Utilised in power supply circuits for industrial automation
• Suitable for motor control in robotics
• Ideal for renewable energy systems such as solar inverters
• Employed in power switching systems for electrical equipment
• Utilised in amplification stages for audio equipment

How does temperature affect the performance?

The device functions efficiently within -55°C to +175°C, enabling use in various thermal environments without compromising performance.

What is the significance of the maximum gate-source voltage?

The MOSFET supports gate-source voltage levels of ±20V, ensuring safe operation and preventing damage during switching operations.

Can this component handle sudden voltage spikes?

Yes, it is fully avalanche rated, allowing it to endure brief voltage spikes, which enhances its performance in challenging applications.

What is the impact of on-resistance on overall efficiency?

Low on-resistance considerably reduces power dissipation during operation, thereby improving energy efficiency in power management applications.

Is it suitable for surface mount applications?

The TO-220AB package is specifically designed for through-hole mounting, ensuring effective heat dissipation rather than surface mounting.

MOSFET Transistors, Infineon

Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	TO-220AB
Series	HEXFET
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Transistor Material	Si
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	67 nC @ 10 V
Height	8.77mm
Minimum Operating Temperature	-55 °C