N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

Bulk discount available

Price Each (In a Tube of 50)

PHP36.528

(exc. VAT)

PHP40.911

(inc. VAT)

100 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Tube**
50 - 50	PHP36.528	PHP1,826.40
100 - 150	PHP35.432	PHP1,771.60
200 - 450	PHP34.369	PHP1,718.45
500 - 950	PHP33.338	PHP1,666.90
1000 +	PHP32.338	PHP1,616.90

**price indicative

RS Stock No.:: 919-4817
Mfr. Part No.:: IRF640NPBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Typical Gate Charge @ Vgs	67 nC @ 10 V
Transistor Material	Si
Height	8.77mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin TO-220AB Infineon IRF640NPBF

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel Power MOSFET 150V to 600V, Infineon

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