Infineon HEXFET Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRFB4020PBF
- RS Stock No.:
- 688-6939
- Distrelec Article No.:
- 304-43-452
- Mfr. Part No.:
- IRFB4020PBF
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 5 units)*
PHP620.01
(exc. VAT)
PHP694.41
(inc. VAT)
FREE delivery for orders over ₱5,000.00
In Stock
- Plus 105 unit(s) shipping from August 31, 2026
- Plus 445 unit(s) shipping from September 07, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 5 - 20 | PHP124.002 | PHP620.01 |
| 25 - 95 | PHP121.522 | PHP607.61 |
| 100 - 245 | PHP119.09 | PHP595.45 |
| 250 - 1245 | PHP116.712 | PHP583.56 |
| 1250 + | PHP96.058 | PHP480.29 |
*price indicative
- RS Stock No.:
- 688-6939
- Distrelec Article No.:
- 304-43-452
- Mfr. Part No.:
- IRFB4020PBF
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 100mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 100W | |
| Typical Gate Charge Qg @ Vgs | 18nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 9.02mm | |
| Standards/Approvals | No | |
| Width | 4.82mm | |
| Length | 10.66mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 100mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 100W | ||
Typical Gate Charge Qg @ Vgs 18nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 9.02mm | ||
Standards/Approvals No | ||
Width 4.82mm | ||
Length 10.66mm | ||
Automotive Standard No | ||
Infineon HEXFET Series MOSFET, 200V Maximum Drain Source Voltage, 18A Maximum Continuous Drain Current - IRFB4020PBF
This MOSFET is a power-switching transistor designed for high-voltage, high-current applications where robust thermal endurance is required. It operates as an N-channel enhancement device in a through-hole TO-220 package, providing a practical solution for discrete power stages and board-mounted switching circuits across a wide temperature range.
Features and Benefits:
• 200V drain rating enables high-voltage switching applications
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery
• 18A continuous drain current supports substantial load currents
• 100W power dissipation permits elevated power handling
• 100 mΩ Rds(on) minimises conduction losses under load
• 18 nC typical gate charge yields faster switching transitions
• 1.3V forward voltage lowers diode conduction drop during recovery
Applications
• Suitable for motor-drive half-bridge stages
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments
• Ideal for offline switch-mode power supplies
• Used with power converters requiring through-hole mounting
• Can be used for high-voltage relay and solenoid drivers
• Appropriate for laboratory prototypes and bench power experiments
What gate-voltage limits should designers observe for safe operation?
The gate-source voltage must not exceed ±20V to avoid damaging the gate oxide and to maintain reliable switching behaviour.
How does the device perform across temperature extremes?
It is rated to operate from -55 °C up to 175 °C, allowing use in environments with wide thermal variation while maintaining specified electrical characteristics.
What package considerations affect PCB layout and cooling?
The TO-220 through-hole form factor provides a single insulated mounting tab and allows direct attachment to a heatsink or chassis for improved thermal management.
How does the body diode influence switching-topology choice?
The intrinsic diode with a 1.3V forward drop should be accounted for in designs with reverse-recovery events to manage dissipation and determine snubber requirements.
Related links
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640NPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRFS4020TRLPBF
- Infineon HEXFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-263 IRF640NSTRLPBF
- Vishay IRF640 Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 IRF640PBF
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220 STP20NF20
- STMicroelectronics STripFET Type N-Channel MOSFET 200 V Enhancement, 3-Pin TO-220