Vishay IRF640 Type N-Channel MOSFET, 18 A, 200 V Enhancement, 3-Pin TO-220 IRF640PBF
- RS Stock No.:
- 541-0452
- Mfr. Part No.:
- IRF640PBF
- Manufacturer:
- Vishay
Bulk discount available
Subtotal (1 tube of 50 units)*
PHP3,230.00
(exc. VAT)
PHP3,617.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- 1,950 unit(s) ready to ship from another location
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Tube* |
|---|---|---|
| 50 - 50 | PHP64.60 | PHP3,230.00 |
| 100 - 200 | PHP62.662 | PHP3,133.10 |
| 250 - 450 | PHP60.782 | PHP3,039.10 |
| 500 - 950 | PHP58.959 | PHP2,947.95 |
| 1000 + | PHP57.19 | PHP2,859.50 |
*price indicative
- RS Stock No.:
- 541-0452
- Mfr. Part No.:
- IRF640PBF
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 18A | |
| Maximum Drain Source Voltage Vds | 200V | |
| Package Type | TO-220 | |
| Series | IRF640 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 180mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 70nC | |
| Maximum Power Dissipation Pd | 125W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Height | 9.01mm | |
| Length | 10.41mm | |
| Width | 4.7 mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 18A | ||
Maximum Drain Source Voltage Vds 200V | ||
Package Type TO-220 | ||
Series IRF640 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 180mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 70nC | ||
Maximum Power Dissipation Pd 125W | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Height 9.01mm | ||
Length 10.41mm | ||
Width 4.7 mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
N-Channel MOSFET, 200V to 250V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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