N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

RS Stock No.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

This image is representative of the product range

Bulk discount available

Price Each (In a Pack of 10)**

PHP67.545

(exc. VAT)

PHP75.65

(inc. VAT)

40 In Global stock for delivery NCR Plus within 10 working day(s), rest of PH within 14 working days*

* Delivery dates may change based on your chosen quantity and delivery address.

FREE delivery for over PHP7,000.00 (ex VAT)

Units	Per Unit	Per Pack**
10 - 10	PHP67.545	PHP675.45
20 - 40	PHP65.518	PHP655.18
50 - 90	PHP63.552	PHP635.52
100 - 190	PHP61.645	PHP616.45
200 +	PHP59.796	PHP597.96

**price indicative

RS Stock No.:: 831-2853
Mfr. Part No.:: IRF640NSTRLPBF
Manufacturer:: Infineon

IRF640NPbF, IRF640NSPbF, IRF640NLPbF, HEXFET Power MOSFET
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	18 A
Maximum Drain Source Voltage	200 V
Package Type	D2PAK (TO-263)
Series	HEXFET
Mounting Type	Surface Mount
Pin Count	3
Maximum Drain Source Resistance	150 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	4V
Minimum Gate Threshold Voltage	2V
Maximum Power Dissipation	150 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-20 V, +20 V
Number of Elements per Chip	1
Maximum Operating Temperature	+175 °C
Length	10.67mm
Transistor Material	Si
Typical Gate Charge @ Vgs	67 nC @ 10 V
Width	9.65mm
Height	4.83mm
Minimum Operating Temperature	-55 °C

N-Channel MOSFET, 18 A, 200 V, 3-Pin D2PAK Infineon IRF640NSTRLPBF

FREE delivery for over PHP7,000.00 (ex VAT)

N-Channel Power MOSFET 150V to 600V, Infineon

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