Infineon HEXFET Type N-Channel MOSFET, 86 A, 55 V Enhancement, 3-Pin TO-263

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Subtotal (1 reel of 800 units)*

PHP52,998.40

(exc. VAT)

PHP59,358.40

(inc. VAT)

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800 +PHP66.248PHP52,998.40

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RS Stock No.:
165-8219
Mfr. Part No.:
IRL3705ZSTRLPBF
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

86A

Maximum Drain Source Voltage Vds

55V

Series

HEXFET

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

12mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

40nC

Maximum Gate Source Voltage Vgs

16 V

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

130W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

11.3 mm

Height

4.83mm

Length

10.67mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

N-Channel Power MOSFET 55V, Infineon


Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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