Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF

RS Stock No.:: 650-4277
Mfr. Part No.:: IRFB4227PBF
Manufacturer:: Infineon

Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF

Bulk discount available

Subtotal (1 unit)**

PHP145.33

(exc. VAT)

PHP162.77

(inc. VAT)

Available for back order.*

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Units	Per Unit
1 - 9	PHP145.33
10 - 49	PHP141.70
50 - 99	PHP138.16
100 - 249	PHP134.70
250 +	PHP131.33

**price indicative

RS Stock No.:: 650-4277
Mfr. Part No.:: IRFB4227PBF
Manufacturer:: Infineon

Datasheet
ESD Control Selection Guide V1

Attribute	Value
Channel Type	N
Maximum Continuous Drain Current	65 A
Maximum Drain Source Voltage	200 V
Series	HEXFET
Package Type	TO-220AB
Mounting Type	Through Hole
Pin Count	3
Maximum Drain Source Resistance	24 mΩ
Channel Mode	Enhancement
Maximum Gate Threshold Voltage	5V
Minimum Gate Threshold Voltage	3V
Maximum Power Dissipation	330 W
Transistor Configuration	Single
Maximum Gate Source Voltage	-30 V, +30 V
Maximum Operating Temperature	+175 °C
Length	10.66mm
Transistor Material	Si
Number of Elements per Chip	1
Width	4.82mm
Typical Gate Charge @ Vgs	70 nC @ 10 V
Height	9.02mm
Minimum Operating Temperature	-40 °C

Infineon HEXFET N-Channel MOSFET, 65 A, 200 V, 3-Pin TO-220AB IRFB4227PBF

FREE delivery for over PHP3,000.00 (ex VAT)

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