Infineon HEXFET Type N-Channel MOSFET, 65 A, 200 V Enhancement, 3-Pin TO-220 IRFB4227PBF

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PHP145.33

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PHP162.77

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1 - 9PHP145.33
10 - 49PHP141.70
50 - 99PHP138.16
100 - 249PHP134.70
250 +PHP131.33

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Packaging Options:
RS Stock No.:
650-4277
Mfr. Part No.:
IRFB4227PBF
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

65A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-220

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

24mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

30 V

Minimum Operating Temperature

-40°C

Typical Gate Charge Qg @ Vgs

70nC

Forward Voltage Vf

1.3V

Maximum Power Dissipation Pd

330W

Maximum Operating Temperature

175°C

Standards/Approvals

No

Width

4.82 mm

Length

10.66mm

Height

9.02mm

Automotive Standard

No

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