Infineon SIPMOS N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23
- RS Stock No.:
- 827-0070
- Distrelec Article No.:
- 304-44-424
- Mfr. Part No.:
- BSS131H6327XTSA1
- Manufacturer:
- Infineon
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PHP2,200.00
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PHP2,465.00
(inc. VAT)
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- 9,000 unit(s) shipping from September 23, 2027
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Units | Per Unit | Per Reel* |
|---|---|---|
| 250 - 250 | PHP8.80 | PHP2,200.00 |
| 500 - 1000 | PHP7.774 | PHP1,943.50 |
| 1250 - 2250 | PHP6.874 | PHP1,718.50 |
| 2500 + | PHP6.87 | PHP1,717.50 |
*price indicative
- RS Stock No.:
- 827-0070
- Distrelec Article No.:
- 304-44-424
- Mfr. Part No.:
- BSS131H6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | N | |
| Maximum Continuous Drain Current Id | 110mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 2.1nC | |
| Maximum Power Dissipation Pd | 360mW | |
| Forward Voltage Vf | 0.81V | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Width | 1.3mm | |
| Height | 1mm | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type N | ||
Maximum Continuous Drain Current Id 110mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 2.1nC | ||
Maximum Power Dissipation Pd 360mW | ||
Forward Voltage Vf 0.81V | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Width 1.3mm | ||
Height 1mm | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 110mA Maximum Continuous Drain Current - BSS131H6327XTSA1
This MOSFET is a high-voltage N-channel enhancement-mode transistor designed for surface-mount power switching in compact electronics. It operates across a wide temperature span suited to demanding environments and is intended for applications requiring controlled drain-source conduction with a moderate continuous current capability.
Features and Benefits:
• 240V drain-source rating enables high-voltage switching
• 110 mA continuous drain capability supports low-current loads
• 20V gate-source limit protects against excessive gate stress
• 20 Ω maximum RDS(on) simplifies thermal management at low currents
• 2.1 nC typical gate charge reduces drive energy requirements
• 360 mW power dissipation suits small form-factor thermal budgets
• 110 mA continuous drain capability supports low-current loads
• 20V gate-source limit protects against excessive gate stress
• 20 Ω maximum RDS(on) simplifies thermal management at low currents
• 2.1 nC typical gate charge reduces drive energy requirements
• 360 mW power dissipation suits small form-factor thermal budgets
Applications
• Suitable for automotive sensor power switching
• Ideal for battery-management control circuitry
• Used for low-current motor-driver gate stages
• Can be used for level-shift and protection functions
• Used with handheld and portable instrumentation
• Ideal for battery-management control circuitry
• Used for low-current motor-driver gate stages
• Can be used for level-shift and protection functions
• Used with handheld and portable instrumentation
What package and mounting method does it use for PCB assembly?
It is supplied in a SOT-23 package configured for surface-mount placement to suit automated soldering processes.
What environmental extremes can it withstand during operation?
The device is rated to operate from -55 °C up to 150 °C to accommodate wide thermal excursions.
How compact is the device for space-constrained designs?
The package footprint measures 2.9mm in length and 1.3mm in width while the component height is 1.0mm for tight-layout applications.
Does it meet any automotive qualification standard for vehicle use?
It conforms to the AEC‑Q101 automotive standard for semiconductor stress screening.
Related links
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