Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1

RS Stock No.:: 178-7507
Distrelec Article No.:: 304-24-004
Mfr. Part No.:: BSS138NH6433XTMA1
Manufacturer:: Infineon

Infineon SIPMOS Type N-Channel MOSFET, 230 mA, 60 V Enhancement, 3-Pin SOT-23 BSS138NH6433XTMA1

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Subtotal (1 reel of 10000 units)*

PHP32,560.00

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PHP36,470.00

(inc. VAT)

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170,000 unit(s) shipping from August 17, 2026

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Units	Per Unit	Per Reel*
10000 +	PHP3.256	PHP32,560.00

*price indicative

RS Stock No.:: 178-7507
Distrelec Article No.:: 304-24-004
Mfr. Part No.:: BSS138NH6433XTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	230mA
	Maximum Drain Source Voltage Vds	60V
	Package Type	SOT-23
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	3.5Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	360mW
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	1nC
	Forward Voltage Vf	0.83V
	Maximum Operating Temperature	150°C
	Height	1mm
	Length	2.9mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 230mA
	Maximum Drain Source Voltage Vds 60V
	Package Type SOT-23
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 3.5Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 360mW
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 1nC
	Forward Voltage Vf 0.83V
	Maximum Operating Temperature 150°C
	Height 1mm
	Length 2.9mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

BSS138N SIPMOS Small Signal Transistor Datasheet

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 3.5Ω Maximum Drain Source Resistance - BSS138NH6433XTMA1

This MOSFET is a compact N-channel transistor designed for low-current switching in surface-mount applications. It operates across a wide temperature range, making it suitable for environments that demand extended thermal tolerance. The device is built for use where controlled enhancement-mode switching and modest power handling are required.

Features and Benefits:

• 60V drain voltage enables use in intermediate-voltage systems
• 3.5Ω low Rds(on) reduces conduction losses in small-signal circuits
• 230mA continuous drain current supports low-power switching loads
• 1nC typical gate charge allows fast gate transitions with minimal drive energy
• 360mW power dissipation helps manage thermal loading in constrained designs
• 20V maximum gate rating protects against excessive drive voltages

Applications

• Suitable for automotive sensor signal switching
• Ideal for handheld instrument power management
• Used with control logic in telematics modules
• Can be used for load switching in battery-operated devices
• Suitable for general-purpose small-signal switching on PCBs

What mounting style is required for this component?

It uses a SOT-23 package intended for surface-mount placement on printed circuit assemblies.

How does it cope with elevated operating temperatures?

The device is specified to function from -55°C up to 150°C, permitting use in high-temperature environments with appropriate thermal design.

What gate drive considerations should be observed?

Keep gate voltage within ±20V to avoid overstressing the gate oxide and ensure gate-drive circuits supply sufficient current for the 1nC typical gate charge.

Is this device suitable for high-current power stages?

It is intended for small-signal and low-current switching

the 230mA continuous drain current and 3.5Ω Rds(on) limit its suitability for high-current power stages.