Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23 SN7002NH6327XTSA2

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PHP989.80

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PHP1,108.60

(inc. VAT)

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Units
Per Unit
Per Pack*
200 - 200PHP4.949PHP989.80
400 - 400PHP4.801PHP960.20
600 - 600PHP4.657PHP931.40
800 - 800PHP4.517PHP903.40
1000 +PHP4.381PHP876.20

*price indicative

Packaging Options:
RS Stock No.:
214-4476
Mfr. Part No.:
SN7002NH6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

60 V

Maximum Power Dissipation Pd

0.36W

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, AEC Q101

Automotive Standard

No

Distrelec Product Id

304-39-427

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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