Infineon SIPMOS Type N-Channel MOSFET, 200 mA, 60 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP8,703.00

(exc. VAT)

PHP9,747.00

(inc. VAT)

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3000 - 3000PHP2.901PHP8,703.00
6000 - 6000PHP2.814PHP8,442.00
9000 +PHP2.729PHP8,187.00

*price indicative

RS Stock No.:
214-4475
Mfr. Part No.:
SN7002NH6327XTSA2
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

200mA

Maximum Drain Source Voltage Vds

60V

Package Type

SOT-23

Series

SIPMOS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.2V

Typical Gate Charge Qg @ Vgs

1.5nC

Maximum Gate Source Voltage Vgs

60 V

Maximum Power Dissipation Pd

0.36W

Maximum Operating Temperature

150°C

Standards/Approvals

IEC61249-2-21, AEC Q101

Automotive Standard

No

This Infineon SIPMOS Small signal MOSFETis ideally suited for space-constrained automotive and/or non-automotive applications. They can be found in almost all applications e.g. battery protection, battery charging, LED lighting and so on.

It is Halogen-free according to IEC61249-2-21

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