Infineon SIPMOS Type P-Channel MOSFET, 170 mA, 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- RS Stock No.:
- 892-2217
- Mfr. Part No.:
- BSS84PH6327XTSA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 250 units)*
PHP1,570.50
(exc. VAT)
PHP1,759.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 1,000 unit(s) shipping from August 10, 2026
- Plus 1,750 unit(s) shipping from August 17, 2026
- Plus 18,000 unit(s) shipping from December 31, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 250 - 500 | PHP6.282 | PHP1,570.50 |
| 750 - 1250 | PHP6.094 | PHP1,523.50 |
| 1500 + | PHP5.911 | PHP1,477.75 |
*price indicative
- RS Stock No.:
- 892-2217
- Mfr. Part No.:
- BSS84PH6327XTSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 170mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SOT-23 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 12Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 1nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 360mW | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | No | |
| Length | 2.9mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 170mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SOT-23 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 12Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 1nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 360mW | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals No | ||
Length 2.9mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 170mA Continuous Drain Current - BSS84PH6327XTSA2
This MOSFET is a P-channel transistor intended for low-power switching in surface-mounted electronic assemblies. It operates across a wide temperature span suitable for challenging environments and is designed for compact board-level installations where a P-channel device with moderate voltage rating is required.
Features and Benefits:
• 60V drain withstand provides high-voltage switching capability
• 12Ω RDS(on) enables controlled conduction for low-current paths
• 1nC typical gate charge reduces drive energy and switching losses
• 170mA continuous drain current supports sustained low-current loads
• 360mW maximum dissipation permits modest power handling in small packages
• 12Ω RDS(on) enables controlled conduction for low-current paths
• 1nC typical gate charge reduces drive energy and switching losses
• 170mA continuous drain current supports sustained low-current loads
• 360mW maximum dissipation permits modest power handling in small packages
Applications
• Suitable for battery protection and reverse-polarity switching
• Ideal for low-current load switching in automotive modules
• Used with logic-level drivers in portable instrumentation
• Can be used for power-rail selection in compact control boards
• Ideal for low-current load switching in automotive modules
• Used with logic-level drivers in portable instrumentation
• Can be used for power-rail selection in compact control boards
What gate voltage limits should designers observe?
The gate-source rating is ±20V, so driver circuits must keep Vgs within that range to avoid device damage.
How does thermal performance influence PCB layout?
With 360mW dissipation, designers should provide adequate copper area and thermal vias to spread heat from the SOT-23 footprint.
Is this device suitable for automotive qualification?
The component meets AEC-Q101 standards, indicating it conforms to automotive-grade stress and screening levels.
What switching behaviour can be expected at high ambient temperatures?
The transistor remains operational from -55°C to 150°C, but RDS(on) and current capability should be verified at the upper temperature extreme for reliable operation.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23