Infineon SIPMOS Type P-Channel MOSFET, 150 mA, 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1

RS Stock No.:: 145-8835
Mfr. Part No.:: BSS84PWH6327XTSA1
Manufacturer:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 150 mA, 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1

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Subtotal (1 reel of 3000 units)*

PHP12,330.00

(exc. VAT)

PHP13,800.00

(inc. VAT)

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Shipping from November 16, 2026

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Units	Per Unit	Per Reel*
3000 +	PHP4.11	PHP12,330.00

*price indicative

RS Stock No.:: 145-8835
Mfr. Part No.:: BSS84PWH6327XTSA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	150mA
	Maximum Drain Source Voltage Vds	60V
	Series	SIPMOS
	Package Type	SC-70
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	25Ω
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	300mW
	Maximum Gate Source Voltage Vgs	20V
	Typical Gate Charge Qg @ Vgs	1nC
	Forward Voltage Vf	-1.12V
	Maximum Operating Temperature	150°C
	Length	2mm
	Height	0.8mm
	Width	1.25mm
	Standards/Approvals	No
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 150mA
	Maximum Drain Source Voltage Vds 60V
	Series SIPMOS
	Package Type SC-70
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 25Ω
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 300mW
	Maximum Gate Source Voltage Vgs 20V
	Typical Gate Charge Qg @ Vgs 1nC
	Forward Voltage Vf -1.12V
	Maximum Operating Temperature 150°C
	Length 2mm
	Height 0.8mm
	Width 1.25mm
	Standards/Approvals No
	Automotive Standard AEC-Q101

COO (Country of Origin):: CN

Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 150mA Maximum Continuous Drain Current - BSS84PWH6327XTSA1

This MOSFET is a P‑channel enhancement device designed for compact surface‑mount applications in automotive and industrial contexts. It controls and switches small currents at moderate voltages while operating across a wide temperature range suitable for demanding environments.

Features and Benefits:

• 60V drain rating enables moderate‑voltage switching capacity
• 150mA continuous drain current supports low‑power circuits
• 25Ω maximum Rds reduces losses in light‑load switching
• 300mW power dissipation allows sustained thermal handling
• 20V gate tolerance permits flexible gate‑drive levels
• 1nC typical gate charge yields fast, low‑energy switching

Applications

• Suitable for load switching in automotive control modules
• Ideal for level‑shifting in sensor interface circuits
• Used with battery management for low‑current paths
• Can be used for protection switching in telematics units
• Appropriate for compact consumer electronics power paths

What environmental range can it tolerate in deployed systems?

It operates from -55°C up to 150°C, covering extended cold‑start and high‑temperature under‑bonnet conditions.

Which package suits high‑density PCB layouts?

It comes in an SC‑70 three‑pin surface‑mount package measuring 1.25x2mm footprint for tight component spacing.

How does the gate charge affect drive requirements?

With a typical Qg of 1nC, standard low‑current drivers can switch it quickly with minimal energy consumption.

Is it compatible with automotive reliability standards?

It meets AEC‑Q101 qualification appropriate for many vehicle electronic subsystems.