Infineon SIPMOS Type P-Channel MOSFET, 620 mA, 60 V Enhancement, 3-Pin SC-59 BSR315PH6327XTSA1
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
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PHP1,390.00
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PHP1,557.00
(inc. VAT)
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- Plus 1,900 unit(s) shipping from August 10, 2026
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Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP27.80 | PHP1,390.00 |
| 100 - 100 | PHP25.498 | PHP1,274.90 |
| 150 - 200 | PHP23.523 | PHP1,176.15 |
| 250 - 450 | PHP21.837 | PHP1,091.85 |
| 500 + | PHP21.262 | PHP1,063.10 |
*price indicative
- RS Stock No.:
- 215-2469
- Mfr. Part No.:
- BSR315PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 620mA | |
| Maximum Drain Source Voltage Vds | 60V | |
| Package Type | SC-59 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 800mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 0.5W | |
| Typical Gate Charge Qg @ Vgs | 6nC | |
| Forward Voltage Vf | -1.2V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 620mA | ||
Maximum Drain Source Voltage Vds 60V | ||
Package Type SC-59 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 800mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 0.5W | ||
Typical Gate Charge Qg @ Vgs 6nC | ||
Forward Voltage Vf -1.2V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
Infineon SIPMOS Series MOSFET, 60V Maximum Drain Source Voltage, 620mA Maximum Continuous Drain Current - BSR315PH6327XTSA1
This MOSFET is a P‑channel enhancement device designed for switching and signal control in compact surface‑mount assemblies. It operates across a wide temperature range and is intended for applications requiring modest continuous current handling and low power loss in a small SC‑59 package. The component is suitable where a low gate‑charge switching element and straightforward gate‑drive capability are required.
Features and Benefits:
• 60V maximum drain voltage enables higher-voltage switching
• 800mΩ Rds(on) reduces conduction losses at low currents
• 0.62A continuous drain current supports small‑signal loads
• 6nC typical gate charge enables faster switching transitions
• 0.5W power dissipation suits low‑power surface‑mount designs
• -55°C to 150°C rating for extended temperature environments
• 800mΩ Rds(on) reduces conduction losses at low currents
• 0.62A continuous drain current supports small‑signal loads
• 6nC typical gate charge enables faster switching transitions
• 0.5W power dissipation suits low‑power surface‑mount designs
• -55°C to 150°C rating for extended temperature environments
Applications
• Used for low‑voltage battery protection circuits
• Suitable for portable device power‑path switching
• Ideal for signal‑level polarity control in modules
• Can be used for small motor‑drive gate stages
• Used with thermal‑management‑limited SMD assemblies
• Suitable for portable device power‑path switching
• Ideal for signal‑level polarity control in modules
• Can be used for small motor‑drive gate stages
• Used with thermal‑management‑limited SMD assemblies
What gate‑drive limitations should I consider?
The gate may be driven up to ±20V relative to the source, so ensure gate‑drive circuitry stays within this voltage range.
How does the thermal environment affect continuous current handling?
The 0.5W dissipation limit constrains current under high ambient temperatures
adequate PCB thermal relief or derating is required to maintain 0.62A continuous current.
What are the mounting considerations for assembly?
It is supplied in an SC‑59 surface‑mount package with three pins, so standard SMD reflow profiles and the correct land‑pattern design are recommended.
Is this device suited for automotive specification programmes?
It is not classified to automotive standards and should not be specified where automotive‑grade certification is mandated.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-59
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS84PWH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS83PH6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 60 V Enhancement, 3-Pin SOT-23 BSS84PH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70
- Infineon SIPMOS Type N-Channel MOSFET 60 V Enhancement, 3-Pin SC-70 BSS138WH6433XTMA1
