Infineon SIPMOS Type P-Channel MOSFET, 80 A, 60 V Enhancement, 3-Pin TO-263 SPB80P06PGATMA1
- RS Stock No.:
- 753-3166
- Mfr. Part No.:
- SPB80P06PGATMA1
- Manufacturer:
- Infineon
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PHP336.40
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| 1 - 9 | PHP336.40 |
| 10 - 49 | PHP326.30 |
| 50 - 99 | PHP306.72 |
| 100 - 249 | PHP279.12 |
| 250 + | PHP245.62 |
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- RS Stock No.:
- 753-3166
- Mfr. Part No.:
- SPB80P06PGATMA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 80A | |
| Maximum Drain Source Voltage Vds | 60V | |
| Series | SIPMOS | |
| Package Type | TO-263 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 23mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Typical Gate Charge Qg @ Vgs | 115nC | |
| Maximum Power Dissipation Pd | 340W | |
| Maximum Operating Temperature | 175°C | |
| Height | 4.57mm | |
| Length | 10.31mm | |
| Width | 9.45mm | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 80A | ||
Maximum Drain Source Voltage Vds 60V | ||
Series SIPMOS | ||
Package Type TO-263 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 23mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20V | ||
Typical Gate Charge Qg @ Vgs 115nC | ||
Maximum Power Dissipation Pd 340W | ||
Maximum Operating Temperature 175°C | ||
Height 4.57mm | ||
Length 10.31mm | ||
Width 9.45mm | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 60V Drain Source Voltage, 80A Continuous Drain Current - SPB80P06PGATMA1
This MOSFET is a P‑channel enhancement device designed for high-current switching in automotive and industrial contexts. It operates across a wide temperature span suitable for demanding environments and fits as a surface-mount power transistor in compact assemblies. The device supports heavy continuous drain currents and is intended for applications requiring robust power handling and thermal endurance.
Features and Benefits:
• 80A continuous drain current improves high-load handling
• 60V drain‑source rating permits medium-voltage system use
• 23mΩ low Rds(ON) reduces conduction losses
• 340W maximum power dissipation supports sustained power delivery
• 115nC gate charge enables predictable switching energy management
• Rated for -55°C to175°C operation extends thermal margin
• 60V drain‑source rating permits medium-voltage system use
• 23mΩ low Rds(ON) reduces conduction losses
• 340W maximum power dissipation supports sustained power delivery
• 115nC gate charge enables predictable switching energy management
• Rated for -55°C to175°C operation extends thermal margin
Applications
• Used for half‑bridge and synchronous rectifier stages
• Suitable for automotive power distribution modules
• Ideal for motor drive switching elements
• Can be used for DC‑DC converter output stages
• Used with in-vehicle electronic control units
• Suitable for automotive power distribution modules
• Ideal for motor drive switching elements
• Can be used for DC‑DC converter output stages
• Used with in-vehicle electronic control units
What package does it come in and how is it mounted?
It is supplied in a TO‑263 package intended for surface mounting to support thermal transfer to the PCB.
What gate voltage limits must be observed during design?
The maximum gate‑source voltage is 20V so gate drive circuits should not exceed this level.
How many pins are available for connection and power routing?
The device provides three pins to accommodate gate, drain and source connections for standard MOSFET layouts.
Is the device specified to automotive stress standards?
It meets the AEC‑Q101 automotive qualification standard for semiconductor devices.
Related links
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