Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1

RS Stock No.:: 462-3247
Mfr. Part No.:: SPD08P06PGBTMA1
Manufacturer:: Infineon

Infineon SIPMOS Type P-Channel MOSFET, 8.8 A, 60 V Enhancement, 3-Pin TO-252 SPD08P06PGBTMA1

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Subtotal (1 pack of 10 units)*

PHP391.02

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PHP437.94

(inc. VAT)

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In Stock

280 unit(s) ready to ship from another location
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Units	Per Unit	Per Pack*
10 - 10	PHP39.102	PHP391.02
20 - 40	PHP34.812	PHP348.12
50 - 90	PHP32.641	PHP326.41
100 - 190	PHP30.916	PHP309.16
200 +	PHP29.534	PHP295.34

*price indicative

RS Stock No.:: 462-3247
Mfr. Part No.:: SPD08P06PGBTMA1
Manufacturer:: Infineon

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	8.8A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-252
	Series	SIPMOS
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	300mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	42W
	Forward Voltage Vf	-1.55V
	Typical Gate Charge Qg @ Vgs	10nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	2.3mm
	Standards/Approvals	No
	Length	6.5mm
	Width	6.22 mm
	Automotive Standard	AEC-Q101

	Select all
	Brand Infineon
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 8.8A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-252
	Series SIPMOS
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 300mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 42W
	Forward Voltage Vf -1.55V
	Typical Gate Charge Qg @ Vgs 10nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 2.3mm
	Standards/Approvals No
	Length 6.5mm
	Width 6.22 mm
	Automotive Standard AEC-Q101

Infineon SIPMOS® Series MOSFET, 8.8A Maximum Continuous Drain Current, 42W Maximum Power Dissipation - SPD08P06PGBTMA1

This MOSFET is designed for applications requiring efficient switching and control. It can handle continuous drain currents of 8.8A and a drain-source voltage of 60V, suitable for various electronic circuits. The device operates effectively within a broad temperature range, enhancing performance in challenging environments.

Features & Benefits

• Enhanced mode operation ensures efficient switching performance

• High power capacity caters to strong electronic applications

• Low Rds(on) minimises energy losses during operation

• Utilises DPAK package for effective surface mount applications

Applications

• Applicable in automotive electronic controls for high reliability

• Ideal for power management systems in industrial equipment

• Suitable for battery management systems in electric vehicles

• Utilised in inverter technology for renewable energy systems

• Used in electronic switching devices for consumer products

What are the implications of using a P-channel configuration?

P-channel configurations facilitate easy integration in high-side switch applications, providing convenient control within circuits.

How does the thermal performance affect longevity?

The capability to operate at up to +175°C enhances reliability and contributes to a longer lifespan in harsh environments.

What is the significance of the AEC-Q101 qualification?

This qualification confirms its suitability for automotive applications, meeting stringent reliability and safety standards.

Can this be used in conjunction with other MOSFETs?

Yes, it can be integrated with other components to create complementary circuits for efficient multi-switching applications.

What factors influence the power dissipation in this device?

Key factors include ambient temperature, drain current, and duty cycle during operation, all affecting overall thermal performance.