Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1

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PHP212.85

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PHP238.39

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10 - 40PHP21.285PHP212.85
50 - 190PHP21.137PHP211.37
200 - 490PHP20.774PHP207.74
500 +PHP20.35PHP203.50

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Packaging Options:
RS Stock No.:
752-8249
Mfr. Part No.:
BSS87H6327FTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

260mA

Maximum Drain Source Voltage Vds

240V

Series

SIPMOS

Package Type

SOT-89

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

7.5Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

3.7nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

1W

Maximum Operating Temperature

150°C

Width

2.5 mm

Length

4.5mm

Height

1.5mm

Standards/Approvals

No

Automotive Standard

AEC-Q101

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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