Infineon SIPMOS Type N-Channel MOSFET, 260 mA, 240 V Enhancement, 3-Pin SOT-89 BSS87H6327FTSA1
- RS Stock No.:
- 752-8249
- Mfr. Part No.:
- BSS87H6327FTSA1
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 10 units)*
PHP292.70
(exc. VAT)
PHP327.80
(inc. VAT)
FREE delivery for orders over ₱5,000.00
Temporarily out of stock
- 1,000 unit(s) shipping from January 14, 2027
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 40 | PHP29.27 | PHP292.70 |
| 50 - 190 | PHP29.066 | PHP290.66 |
| 200 - 490 | PHP28.568 | PHP285.68 |
| 500 + | PHP27.984 | PHP279.84 |
*price indicative
- RS Stock No.:
- 752-8249
- Mfr. Part No.:
- BSS87H6327FTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 260mA | |
| Maximum Drain Source Voltage Vds | 240V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 7.5Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 3.7nC | |
| Maximum Gate Source Voltage Vgs | 20V | |
| Maximum Operating Temperature | 150°C | |
| Height | 1.5mm | |
| Width | 2.5mm | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 260mA | ||
Maximum Drain Source Voltage Vds 240V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 7.5Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 3.7nC | ||
Maximum Gate Source Voltage Vgs 20V | ||
Maximum Operating Temperature 150°C | ||
Height 1.5mm | ||
Width 2.5mm | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 240V Maximum Drain Source Voltage, 1W Maximum Power Dissipation - BSS87H6327FTSA1
This MOSFET is a surface-mount switching device designed for low-current, high-voltage applications in automotive and industrial environments. It operates as an enhancement-mode N-channel transistor and is intended for compact board-level implementations where thermal endurance and voltage handling are required.
Features and Benefits:
• 240V drain capability enabling high-voltage switching applications
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management
• 7.5 Ω maximum Rds(on) reducing conduction losses at low currents
• 1W maximum power dissipation for modest thermal loads
• 260 mA continuous drain current supporting small-signal switching
• Vgs rating of 20V permitting wide gate-drive tolerance
• Gate charge 3.7 nC allowing predictable switching energy management
Applications
• Suitable for auxiliary automotive control circuits
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies
• Ideal for battery-management sensing and switching
• Used with driver ICs in power-limited converters
• Can be used for industrial signal-level high-voltage switching
• Used for compact surface-mount prototypes and small assemblies
What temperature range can it reliably endure in operation?
It is specified to function between -55 °C and 150 °C, allowing use across harsh ambient and elevated under‑bonnet conditions.
How many pins and what mounting format does it require on the PCB?
The device has three electrical leads and is supplied in an SOT-89 package for surface mounting.
How does the package size affect board-space planning?
Its compact 4.5 x 2.5 x 1.5mm envelope minimises footprint and supports dense layouts without external heatsinking for low-power designs.
Is the device suited to automotive qualification criteria?
It meets automotive-grade AEC‑Q101 standards, aligning with component selection for vehicle electronic subsystems.
Related links
- DiodesZetex Type N-Channel MOSFET 240 V Enhancement, 3-Pin E-Line
- DiodesZetex Type N-Channel MOSFET 240 V Enhancement, 3-Pin E-Line ZVN4424A
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223 BSP92PH6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1
- Infineon SIPMOS Type N-Channel MOSFET 240 V Enhancement, 4-Pin SOT-223 BSP89H6327XTSA1
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1