Infineon SIPMOS Type P-Channel MOSFET, 190 mA, 250 V Enhancement, 3-Pin SOT-89 BSS192PH6327FTSA1
- RS Stock No.:
- 753-2848
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Manufacturer:
- Infineon
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PHP308.80
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PHP345.90
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP30.88 | PHP308.80 |
| 20 - 40 | PHP29.954 | PHP299.54 |
| 50 - 90 | PHP29.055 | PHP290.55 |
| 100 - 190 | PHP28.183 | PHP281.83 |
| 200 + | PHP27.337 | PHP273.37 |
*price indicative
- RS Stock No.:
- 753-2848
- Mfr. Part No.:
- BSS192PH6327FTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 190mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Package Type | SOT-89 | |
| Series | SIPMOS | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 20Ω | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 1W | |
| Typical Gate Charge Qg @ Vgs | 4.9nC | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | -1.1V | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 4.5mm | |
| Height | 1.5mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 190mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Package Type SOT-89 | ||
Series SIPMOS | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 20Ω | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 1W | ||
Typical Gate Charge Qg @ Vgs 4.9nC | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf -1.1V | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 4.5mm | ||
Height 1.5mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 190mA Maximum Continuous Drain Current - BSS192PH6327FTSA1
This MOSFET is a P‑channel device designed for surface‑mount power switching in demanding electrical environments. It functions as an enhancement‑mode transistor suited to applications requiring controlled high‑voltage switching and low continuous current handling, operating across a wide temperature span for use in regulated systems and automotive electronics.
Features and Benefits:
• 250V drain‑source rating enables high‑voltage switching capability
• 190mA continuous drain current supports low‑current load control
• 20Ω maximum Rds reduces conduction loss in low‑current circuits
• 4.9nC typical gate charge at Vgs ensures predictable switching behaviour
• 20V gate‑source limit allows straightforward gate drive designs
• 1W maximum power dissipation manages thermal constraints in compact layouts
• 190mA continuous drain current supports low‑current load control
• 20Ω maximum Rds reduces conduction loss in low‑current circuits
• 4.9nC typical gate charge at Vgs ensures predictable switching behaviour
• 20V gate‑source limit allows straightforward gate drive designs
• 1W maximum power dissipation manages thermal constraints in compact layouts
Applications
• Suitable for automotive sensor power path switching
• Ideal for low‑power reverse polarity protection circuits
• Used with high‑voltage battery management subsystems
• Can be used for small relay replacement in control modules
• Appropriate for surface‑mount power distribution on compact boards
• Ideal for low‑power reverse polarity protection circuits
• Used with high‑voltage battery management subsystems
• Can be used for small relay replacement in control modules
• Appropriate for surface‑mount power distribution on compact boards
What thermal range can it tolerate in harsh conditions?
It operates reliably from -55°C up to 150°C to suit extended temperature environments.
How many pins does the package present for PCB layout?
The component is supplied with three pins, enabling standard SOT‑89 footprint routing.
Which package style should designers expect for assembly?
It arrives in a SOT‑89 surface‑mount package tailored for compact board designs.
Is the device rated for automotive qualification standards?
It conforms to AEC‑Q101, meeting industry stress screening for automotive use.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 3-Pin SOT-89
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