Infineon SIPMOS Type P-Channel MOSFET, 430 mA, 250 V Enhancement, 4-Pin SOT-223 BSP317PH6327XTSA1
- RS Stock No.:
- 753-2813
- Distrelec Article No.:
- 304-35-440
- Mfr. Part No.:
- BSP317PH6327XTSA1
- Manufacturer:
- Infineon
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PHP464.10
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PHP519.80
(inc. VAT)
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Units | Per Unit | Per Pack* |
|---|---|---|
| 10 - 10 | PHP46.41 | PHP464.10 |
| 20 - 40 | PHP45.017 | PHP450.17 |
| 50 - 90 | PHP42.317 | PHP423.17 |
| 100 - 190 | PHP38.508 | PHP385.08 |
| 200 + | PHP33.886 | PHP338.86 |
*price indicative
- RS Stock No.:
- 753-2813
- Distrelec Article No.:
- 304-35-440
- Mfr. Part No.:
- BSP317PH6327XTSA1
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 430mA | |
| Maximum Drain Source Voltage Vds | 250V | |
| Series | SIPMOS | |
| Package Type | SOT-223 | |
| Mount Type | Surface | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 5Ω | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 1.8W | |
| Typical Gate Charge Qg @ Vgs | 11.6nC | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | No | |
| Length | 6.5mm | |
| Height | 1.6mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 430mA | ||
Maximum Drain Source Voltage Vds 250V | ||
Series SIPMOS | ||
Package Type SOT-223 | ||
Mount Type Surface | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 5Ω | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 1.8W | ||
Typical Gate Charge Qg @ Vgs 11.6nC | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals No | ||
Length 6.5mm | ||
Height 1.6mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 250V Maximum Drain Source Voltage, 430mA Maximum Continuous Drain Current - BSP317PH6327XTSA1
This MOSFET is a P‑channel enhancement device designed for high‑voltage switching in surface‑mount assemblies. It operates across a wide thermal span suitable for industrial and automotive environments and is supplied in a SOT‑223 package for straightforward board mounting.
Features and Benefits:
• 250V drain‑source rating enables high‑voltage switching capability
• 5Ω maximum Rds minimises conduction losses in low‑current circuits
• 430mA continuous drain current supports steady‑state loads
• 11.6nC typical gate charge reduces switching energy loss
• 20V gate threshold allows standard gate drive voltages
• AEC‑Q101 qualification meets automotive component stress levels
• 5Ω maximum Rds minimises conduction losses in low‑current circuits
• 430mA continuous drain current supports steady‑state loads
• 11.6nC typical gate charge reduces switching energy loss
• 20V gate threshold allows standard gate drive voltages
• AEC‑Q101 qualification meets automotive component stress levels
Applications
• Suitable for automotive power distribution and load switching
• Ideal for high‑voltage reverse battery protection circuits
• Used with accessory power modules in vehicles and machinery
• Can be used for industrial control and signal switching
• Appropriate for compact surface‑mount power conversion boards
• Ideal for high‑voltage reverse battery protection circuits
• Used with accessory power modules in vehicles and machinery
• Can be used for industrial control and signal switching
• Appropriate for compact surface‑mount power conversion boards
What mounting considerations apply for thermal performance?
The SOT‑223 surface‑mount format provides a thermal path through PCB copper
adequate board heatsinking increases the 1.8W power dissipation capability under elevated ambient temperatures.
How does it behave in cold and hot environments?
It is specified to function from -55°C up to 150°C, maintaining device operation across typical automotive and industrial temperature ranges.
What gate drive constraints should designers observe?
Gate‑to‑source voltage must not exceed 20V
design gate drivers accordingly and include protection to prevent exceeding this limit.
Are there switching trade‑offs to consider?
The relatively low gate charge of 11.6nC balances switching speed and drive current, so driver selection should match the desired trade‑off between transition speed and EMI.
Related links
- Infineon SIPMOS Type P-Channel MOSFET 250 V Enhancement, 4-Pin SOT-223
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- Infineon SIPMOS Type P-Channel MOSFET 100 V Enhancement, 4-Pin SOT-223
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