Infineon SIPMOS Type N-Channel MOSFET, 110 mA, 240 V Enhancement, 3-Pin SOT-23 BSS131H6327XTSA1

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Subtotal (1 reel of 3000 units)*

PHP13,662.00

(exc. VAT)

PHP15,300.00

(inc. VAT)

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3000 +PHP4.554PHP13,662.00

*price indicative

RS Stock No.:
165-5867
Mfr. Part No.:
BSS131H6327XTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

110mA

Maximum Drain Source Voltage Vds

240V

Series

SIPMOS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

20Ω

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

360mW

Forward Voltage Vf

0.81V

Typical Gate Charge Qg @ Vgs

2.1nC

Maximum Operating Temperature

150°C

Standards/Approvals

No

Length

2.9mm

Width

1.3 mm

Height

1mm

Automotive Standard

AEC-Q101

COO (Country of Origin):
CN

Infineon SIPMOS® N-Channel MOSFETs


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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