Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

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Subtotal (1 tape of 50 units)*

PHP857.50

(exc. VAT)

PHP960.50

(inc. VAT)

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Per Tape*
50 - 50PHP17.15PHP857.50
100 - 200PHP16.635PHP831.75
250 - 450PHP15.637PHP781.85
500 - 950PHP14.23PHP711.50
1000 +PHP12.522PHP626.10

*price indicative

Packaging Options:
RS Stock No.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

Si2367DS

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.7W

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

3.04mm

Width

1.4 mm

Height

1.02mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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