Vishay Si2367DS Type P-Channel Power MOSFET, 3.8 A, 20 V Enhancement, 3-Pin SOT-23 SI2367DS-T1-GE3

This image is representative of the product range

View all MOSFETs
Bulk discount available

Subtotal (1 tape of 50 units)*

PHP1,114.75

(exc. VAT)

PHP1,248.50

(inc. VAT)

Add to Basket
Select or type quantity
Temporarily out of stock
  • 1,350 unit(s) shipping from May 18, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.

Units
Per Unit
Per Tape*
50 - 50PHP22.295PHP1,114.75
100 - 200PHP21.626PHP1,081.30
250 - 450PHP20.329PHP1,016.45
500 - 950PHP18.499PHP924.95
1000 +PHP16.279PHP813.95

*price indicative

Packaging Options:
RS Stock No.:
812-3136
Mfr. Part No.:
SI2367DS-T1-GE3
Manufacturer:
Vishay
Find similar products by selecting one or more attributes.
Select all

Brand

Vishay

Product Type

Power MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

3.8A

Maximum Drain Source Voltage Vds

20V

Series

Si2367DS

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.066Ω

Channel Mode

Enhancement

Forward Voltage Vf

1.2V

Maximum Power Dissipation Pd

1.7W

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

9nC

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

RoHS 2002/95/EC, IEC 61249-2-21

Length

3.04mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


Related links