Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363 SIA449DJ-T1-GE3

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Subtotal (1 pack of 20 units)*

PHP470.40

(exc. VAT)

PHP526.80

(inc. VAT)

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Last RS stock
  • Final 2,920 unit(s), ready to ship from another location
Units
Per Unit
Per Pack*
20 - 280PHP23.52PHP470.40
300 - 580PHP22.815PHP456.30
600 - 1480PHP21.446PHP428.92
1500 - 2980PHP19.516PHP390.32
3000 +PHP17.174PHP343.48

*price indicative

Packaging Options:
RS Stock No.:
814-1213
Mfr. Part No.:
SIA449DJ-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Channel Type

Type P

Product Type

Power MOSFET

Maximum Continuous Drain Current Id

12A

Maximum Drain Source Voltage Vds

30V

Series

TrenchFET

Package Type

SOT-363

Mount Type

Surface

Pin Count

6

Maximum Drain Source Resistance Rds

0.038Ω

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

23.1nC

Maximum Power Dissipation Pd

19W

Maximum Gate Source Voltage Vgs

12 V

Maximum Operating Temperature

150°C

Length

2.15mm

Height

0.8mm

Standards/Approvals

RoHS

Width

2.15 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, TrenchFET Gen III, Vishay Semiconductor


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