Vishay TrenchFET Type P-Channel MOSFET, 0.52 A, 150 V Enhancement, 6-Pin SOT-363 SI1411DH-T1-GE3
- RS Stock No.:
- 180-7915
- Mfr. Part No.:
- SI1411DH-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 20 units)*
PHP792.80
(exc. VAT)
PHP888.00
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Last RS stock
- Final 5,740 unit(s), ready to ship from another location
Units | Per Unit | Per Pack* |
|---|---|---|
| 20 - 20 | PHP39.64 | PHP792.80 |
| 40 - 80 | PHP38.451 | PHP769.02 |
| 100 - 480 | PHP37.297 | PHP745.94 |
| 500 - 980 | PHP36.178 | PHP723.56 |
| 1000 + | PHP35.092 | PHP701.84 |
*price indicative
- RS Stock No.:
- 180-7915
- Mfr. Part No.:
- SI1411DH-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Channel Type | Type P | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 0.52A | |
| Maximum Drain Source Voltage Vds | 150V | |
| Package Type | SOT-363 | |
| Series | TrenchFET | |
| Mount Type | Surface | |
| Pin Count | 6 | |
| Maximum Drain Source Resistance Rds | 2.6Ω | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 4.2nC | |
| Forward Voltage Vf | -1.1V | |
| Maximum Power Dissipation Pd | 1W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Width | 2.4 mm | |
| Standards/Approvals | No | |
| Height | 1.1mm | |
| Length | 2.2mm | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Channel Type Type P | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 0.52A | ||
Maximum Drain Source Voltage Vds 150V | ||
Package Type SOT-363 | ||
Series TrenchFET | ||
Mount Type Surface | ||
Pin Count 6 | ||
Maximum Drain Source Resistance Rds 2.6Ω | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 4.2nC | ||
Forward Voltage Vf -1.1V | ||
Maximum Power Dissipation Pd 1W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Width 2.4 mm | ||
Standards/Approvals No | ||
Height 1.1mm | ||
Length 2.2mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Vishay Siliconix SI1411DH series TrenchFET P channel power MOSFET has drain to source voltage of 150 V. It is used in active clamp circuits in DC/DC power supplies.
Small, thermally enhanced SC-70 package
Ultra low on-resistance
Pb-free
Halogen free
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