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Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363

RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel Power MOSFET, 12 A, 30 V Enhancement, 6-Pin SOT-363

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RS Stock No.:: 165-7182
Mfr. Part No.:: SIA449DJ-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

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Select all	Attribute	Value
	Brand	Vishay
	Channel Type	Type P
	Product Type	Power MOSFET
	Maximum Continuous Drain Current Id	12A
	Maximum Drain Source Voltage Vds	30V
	Package Type	SOT-363
	Series	TrenchFET
	Mount Type	Surface
	Pin Count	6
	Maximum Drain Source Resistance Rds	0.038Ω
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	12 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-0.8V
	Typical Gate Charge Qg @ Vgs	23.1nC
	Maximum Power Dissipation Pd	19W
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Width	2.15 mm
	Length	2.15mm
	Height	0.8mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Channel Type Type P
	Product Type Power MOSFET
	Maximum Continuous Drain Current Id 12A
	Maximum Drain Source Voltage Vds 30V
	Package Type SOT-363
	Series TrenchFET
	Mount Type Surface
	Pin Count 6
	Maximum Drain Source Resistance Rds 0.038Ω
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 12 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -0.8V
	Typical Gate Charge Qg @ Vgs 23.1nC
	Maximum Power Dissipation Pd 19W
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Width 2.15 mm
	Length 2.15mm
	Height 0.8mm
	Automotive Standard No

COO (Country of Origin):: CN

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