Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23

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Subtotal (1 reel of 3000 units)*

PHP14,595.00

(exc. VAT)

PHP16,347.00

(inc. VAT)

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3000 +PHP4.865PHP14,595.00

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RS Stock No.:
165-6934
Mfr. Part No.:
SI2365EDS-T1-GE3
Manufacturer:
Vishay
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Brand

Vishay

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

5.9A

Maximum Drain Source Voltage Vds

20V

Package Type

SOT-23

Series

TrenchFET

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

0.0675Ω

Channel Mode

Enhancement

Forward Voltage Vf

-0.8V

Typical Gate Charge Qg @ Vgs

13.8nC

Minimum Operating Temperature

-50°C

Maximum Gate Source Voltage Vgs

8 V

Maximum Power Dissipation Pd

1.7W

Maximum Operating Temperature

150°C

Height

1.02mm

Standards/Approvals

RoHS

Length

3.04mm

Width

1.4 mm

Automotive Standard

No

COO (Country of Origin):
CN

P-Channel MOSFET, 8V to 20V, Vishay Semiconductor


MOSFET Transistors, Vishay Semiconductor


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