Vishay TrenchFET Type P-Channel MOSFET, 5.9 A, 20 V Enhancement, 3-Pin SOT-23 SI2365EDS-T1-GE3
- RS Stock No.:
- 812-3139
- Mfr. Part No.:
- SI2365EDS-T1-GE3
- Manufacturer:
- Vishay
This image is representative of the product range
Bulk discount available
Subtotal (1 pack of 50 units)*
PHP470.40
(exc. VAT)
PHP526.85
(inc. VAT)
FREE delivery for orders over ₱3,000.00
Temporarily out of stock
- 56,500 unit(s) shipping from December 29, 2025
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 50 - 50 | PHP9.408 | PHP470.40 |
| 100 - 200 | PHP8.467 | PHP423.35 |
| 250 - 450 | PHP7.62 | PHP381.00 |
| 500 - 950 | PHP6.859 | PHP342.95 |
| 1000 + | PHP6.173 | PHP308.65 |
*price indicative
- RS Stock No.:
- 812-3139
- Mfr. Part No.:
- SI2365EDS-T1-GE3
- Manufacturer:
- Vishay
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Vishay | |
| Product Type | MOSFET | |
| Channel Type | Type P | |
| Maximum Continuous Drain Current Id | 5.9A | |
| Maximum Drain Source Voltage Vds | 20V | |
| Series | TrenchFET | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 0.0675Ω | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | -0.8V | |
| Typical Gate Charge Qg @ Vgs | 13.8nC | |
| Minimum Operating Temperature | -50°C | |
| Maximum Power Dissipation Pd | 1.7W | |
| Maximum Gate Source Voltage Vgs | 8 V | |
| Maximum Operating Temperature | 150°C | |
| Length | 3.04mm | |
| Height | 1.02mm | |
| Width | 1.4 mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Select all | ||
|---|---|---|
Brand Vishay | ||
Product Type MOSFET | ||
Channel Type Type P | ||
Maximum Continuous Drain Current Id 5.9A | ||
Maximum Drain Source Voltage Vds 20V | ||
Series TrenchFET | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 0.0675Ω | ||
Channel Mode Enhancement | ||
Forward Voltage Vf -0.8V | ||
Typical Gate Charge Qg @ Vgs 13.8nC | ||
Minimum Operating Temperature -50°C | ||
Maximum Power Dissipation Pd 1.7W | ||
Maximum Gate Source Voltage Vgs 8 V | ||
Maximum Operating Temperature 150°C | ||
Length 3.04mm | ||
Height 1.02mm | ||
Width 1.4 mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
P-Channel MOSFET, 8V to 20V, Vishay Semiconductor
MOSFET Transistors, Vishay Semiconductor
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