Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23

RS Stock No.:: 180-7277
Mfr. Part No.:: SI2399DS-T1-GE3
Manufacturer:: Vishay

Vishay TrenchFET Type P-Channel MOSFET, 6 A, 20 V Enhancement, 3-Pin SOT-23

This image is representative of the product range

Subtotal (1 reel of 3000 units)*

PHP51,312.00

(exc. VAT)

PHP57,468.00

(inc. VAT)

FREE delivery for orders over ₱3,000.00

Last RS stock

Final 6,000 unit(s), ready to ship from another location

Units	Per Unit	Per Reel*
3000 +	PHP17.104	PHP51,312.00

*price indicative

RS Stock No.:: 180-7277
Mfr. Part No.:: SI2399DS-T1-GE3
Manufacturer:: Vishay

Specifications

Technical data sheets

Legislation and Compliance

Product Details

Find similar products by selecting one or more attributes.

Select all	Attribute	Value
	Brand	Vishay
	Product Type	MOSFET
	Channel Type	Type P
	Maximum Continuous Drain Current Id	6A
	Maximum Drain Source Voltage Vds	20V
	Series	TrenchFET
	Package Type	SOT-23
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	67mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	-1.2V
	Typical Gate Charge Qg @ Vgs	10nC
	Maximum Power Dissipation Pd	1.6W
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	150°C
	Length	3.04mm
	Standards/Approvals	No
	Height	1.12mm
	Width	2.64 mm
	Automotive Standard	No

	Select all
	Brand Vishay
	Product Type MOSFET
	Channel Type Type P
	Maximum Continuous Drain Current Id 6A
	Maximum Drain Source Voltage Vds 20V
	Series TrenchFET
	Package Type SOT-23
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 67mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Forward Voltage Vf -1.2V
	Typical Gate Charge Qg @ Vgs 10nC
	Maximum Power Dissipation Pd 1.6W
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 150°C
	Length 3.04mm
	Standards/Approvals No
	Height 1.12mm
	Width 2.64 mm
	Automotive Standard No

Datasheet

COO (Country of Origin):: CN

Vishay MOSFET

The Vishay surface mount P-channel MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has drain-source resistance of 34mohm at a gate-source voltage of 10V. It has a maximum power dissipation of 2.5W and continuous drain current of 6A. The minimum and a maximum driving voltage for this transistor are 2.5V and 10V respectively. The MOSFET has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits

• Halogen free

• Lead (Pb) free

• Operating temperature ranges between -55°C and 150°C

• TrenchFET power MOSFET

Applications

• DC/DC converters

• Load switch

• PA switch

Certifications

• ANSI/ESD S20.20:2014

• BS EN 61340-5-1:2007

• IEC 61249-2-21

• Rg tested