Infineon SIPMOS N-Channel MOSFET, 90 mA, 600 V, 3-Pin SOT-89 BSS225H6327FTSA1

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PHP323.25

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PHP362.04

(inc. VAT)

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10 - 10PHP32.325PHP323.25
20 - 90PHP31.355PHP313.55
100 - 190PHP30.414PHP304.14
200 - 390PHP29.502PHP295.02
400 +PHP28.617PHP286.17

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Packaging Options:
RS Stock No.:
752-8246
Mfr. Part No.:
BSS225H6327FTSA1
Manufacturer:
Infineon
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Brand

Infineon

Channel Type

N

Maximum Continuous Drain Current

90 mA

Maximum Drain Source Voltage

600 V

Package Type

SOT-89

Series

SIPMOS

Mounting Type

Surface Mount

Pin Count

3

Maximum Drain Source Resistance

45 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

2.3V

Minimum Gate Threshold Voltage

1.3V

Maximum Power Dissipation

1 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-20 V, +20 V

Typical Gate Charge @ Vgs

3.9 nC @ 10 V

Width

2.5mm

Length

4.5mm

Number of Elements per Chip

1

Transistor Material

Si

Maximum Operating Temperature

+150 °C

Minimum Operating Temperature

-55 °C

Height

1.5mm

Infineon SIPMOS® N-Channel MOSFETs



MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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