Infineon SIPMOS Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126H6327XTSA2
- RS Stock No.:
- 753-2838
- Distrelec Article No.:
- 304-45-303
- Mfr. Part No.:
- BSS126H6327XTSA2
- Manufacturer:
- Infineon
This image is representative of the product range
Bulk discount available
View bulk pricing optionsSubtotal (1 pack of 25 units)*
PHP604.00
(exc. VAT)
PHP676.50
(inc. VAT)
FREE delivery for orders over ₱3,000.00
In Stock
- Plus 400 unit(s) shipping from August 10, 2026
Need more? Click ‘Check delivery dates’ to find extra stock and lead times.
Units | Per Unit | Per Pack* |
|---|---|---|
| 25 - 25 | PHP24.16 | PHP604.00 |
| 50 - 100 | PHP23.436 | PHP585.90 |
| 125 - 225 | PHP22.029 | PHP550.73 |
| 250 - 475 | PHP20.046 | PHP501.15 |
| 500 + | PHP17.641 | PHP441.03 |
*price indicative
- RS Stock No.:
- 753-2838
- Distrelec Article No.:
- 304-45-303
- Mfr. Part No.:
- BSS126H6327XTSA2
- Manufacturer:
- Infineon
Specifications
Technical data sheets
Legislation and Compliance
Product Details
Find similar products by selecting one or more attributes.
Select all | Attribute | Value |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 21mA | |
| Maximum Drain Source Voltage Vds | 600V | |
| Series | SIPMOS | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 700Ω | |
| Channel Mode | Depletion | |
| Forward Voltage Vf | 1.2V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 1.4nC | |
| Maximum Power Dissipation Pd | 500mW | |
| Maximum Operating Temperature | 150°C | |
| Length | 2.9mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Automotive Standard | AEC-Q101 | |
| Select all | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 21mA | ||
Maximum Drain Source Voltage Vds 600V | ||
Series SIPMOS | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 700Ω | ||
Channel Mode Depletion | ||
Forward Voltage Vf 1.2V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 1.4nC | ||
Maximum Power Dissipation Pd 500mW | ||
Maximum Operating Temperature 150°C | ||
Length 2.9mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Automotive Standard AEC-Q101 | ||
Infineon SIPMOS Series MOSFET, 600V Maximum Drain Source Voltage, 500mW Maximum Power Dissipation - BSS126H6327XTSA2
This MOSFET is a high-voltage switching transistor designed for surface-mount applications where a compact footprint and extended temperature range are required. It operates as an N-channel depletion device and provides switching and control functionality in power conversion and protection circuits while withstanding harsh ambient conditions.
Features and Benefits:
• 600V drain-source rating enables high-voltage switching
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
• 700Ω maximum Rds minimises leakage control in the off state
• 21mA continuous drain current supports low-current control loops
• 1.4nC typical gate charge permits faster gate transitions
• 20V gate-source tolerance allows a wide gate drive range
• 500mW power dissipation handles modest thermal loads
Applications
• Suitable for high-voltage gate protection circuits
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
• Ideal for low-current flyback or snubber networks
• Used with automotive sensors and control modules
• Can be used for switch-off elements in power supplies
• Suitable for surface-mount prototypes and compact assemblies
What package type is used for compact PCB mounting?
It is supplied in a small SOT-23 surface-mount package for dense board layouts.
How does it perform across temperature extremes?
The device is specified to operate from -55°C up to 150°C for broad environmental ranges.
What is the diode forward characteristic for reverse conduction considerations?
The intrinsic diode has a forward voltage of 1.2V relevant when the body diode conducts.
What pin configuration and count should I expect when designing footprints?
The device utilises three pins, consistent with single-transistor SOT-23 layouts.
Related links
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23
- Infineon SIPMOS® Type N-Channel MOSFET 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23
- Infineon SIPMOS Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127H6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 60 V Depletion, 3-Pin SOT-23 BSS159NH6327XTSA2
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223
- Infineon SIPMOS Type N-Channel MOSFET 600 V Depletion, 4-Pin SOT-223 BSP135H6327XTSA1
- Infineon BSS127I Type N-Channel MOSFET 600 V Enhancement, 3-Pin SOT-23 BSS127IXTSA1