Infineon SIPMOS® Type N-Channel MOSFET, 21 mA, 600 V Depletion, 3-Pin SOT-23 BSS126IXTSA1

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Subtotal (1 pack of 10 units)*

PHP108.30

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PHP121.30

(inc. VAT)

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Units
Per Unit
Per Pack*
10 - 10PHP10.83PHP108.30
20 - 90PHP10.603PHP106.03
100 - 240PHP10.401PHP104.01
250 - 490PHP10.20PHP102.00
500 +PHP9.998PHP99.98

*price indicative

Packaging Options:
RS Stock No.:
236-4398
Mfr. Part No.:
BSS126IXTSA1
Manufacturer:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

21mA

Maximum Drain Source Voltage Vds

600V

Series

SIPMOS®

Package Type

SOT-23

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

700Ω

Channel Mode

Depletion

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

1.4nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

0.5W

Forward Voltage Vf

1.2V

Maximum Operating Temperature

150°C

Length

3mm

Height

1.1mm

Width

1.4 mm

Standards/Approvals

No

Automotive Standard

No

The Infineon 600V N-channel small signal depletion-mode MOSFET is Pb-free lead plating, RoHS compliant and halogen-free according to IEC61249-2-21. Fully qualified according to JEDEC for industrial applications. It has Industry standard qualification level.

High system reliability

Environmentally friendly

PCB space and cost saving

dv/dt rated

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